P‐50: Development of Multilevel Memory Consisting of Oxide TFTs

Abstract

This paper proposes a multilevel memory circuit with a simple structure composed of two oxide thin film transistors (Ox-TFTs) and one capacitor. The proposed memory circuit utilizes low leakage current characteristics of the Ox-TFT. Simulation and measurement results confirm that the proposed memory circuit can achieve multilevel memory feature. Author Keywordsmultilevel memory; oxide thin film transistor (Ox-TFT); low leakage current P-50 / S.-H. Yun SID 2017 DIGEST • 1427