P‐54: An Oxide‐Semiconductor‐FET‐Based Dynamic Logic Circuit for Wearable Systems

Hamada, Toshiki; Takeuchi, Toshihiko; Aoki, Takuya; Kozuma, Munehiro; Ishihara, Takayuki; Ikeda, Makoto; Yamazaki, Shunpei

doi:10.1002/sdtp.13209

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2020

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“…A field-effect transistor (FET) using a crystalline oxide semiconductor material that has alignment in the c-axis direction (CAAC-IGZO) is applied to various electronic circuits (1)(2)(3)(4)(5)(6)(7)(8)27). In the LSI field, it is applied to non-volatile and analog memories utilizing its extremely low off-state leakage current (9)(10)(11). CAAC-IGZO FETs can be embedded in the back-end-of-line (BEOL) layers of complementary MOS (CMOS) logic processes.…”

Section: Introductionmentioning

confidence: 99%

Characteristics and Applications of CAAC-IGZO FET with Gate Length of 13nm

et al. 2020

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A field-effect transistor (FET) with a gate length of 13 nm having a c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) channel was fabricated. The CAAC-IGZO FET has an off-state leakage current of 200 yA/μm, a cutoff frequency of 60GHz, and a maximum oscillation frequency of 16GHz. A CAAC-IGZO FET, though it is a small transistor, withstands voltages up to approximately 2.5 V. It also has stable current characteristics with less temperature dependence than Si devices. We have constructed an equivalent-circuit model of the CAAC-IGZO FET and designed an RF amplifier to show CAAC-IGZO FET's applicability to the GHz-range RF circuitry.

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