P‐8: Synthesis of Superior‐Performance InGaZnO Based on Ideal Reaction of Plasma Enhanced Atomic Layer Deposition^†

Abstract

Based on moderating the reaction energy of plasma enhanced atomic layer deposition (PEALD), we fabricated a superior‐performance InGaZnO transistor with the ultra‐high field effect mobility over 100 cm2/Vs, absolute threshold voltage under 0.5 V, and subthreshold swing lower than 100 mV/decade. This study will be powerful basic of synthesizing the ALD‐based oxide semiconductor for scaling down such as 3D integration applications.