p and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactor

Jakomin, R.; Beaudoin, G.; Gogneau, N.; Lamare, Bruno; Largeau, L.; Mauguin, O.; Sagnes, I.

doi:10.1016/j.tsf.2011.02.019

Cited by 27 publications

(31 citation statements)

References 20 publications

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“…It has also been reported that the atomic interdiffusions of GaAs/Ge could be suppressed by introducing a AlAs or AlGaAs buffer layer [6,10,13]. The epitaxy of Ge/GaAs has also attracted much attention in recent years [14][15][16][17]. For the growth of Ge on GaAs, although ADB defects are not a major concern, the difference in valence structures between Ge and GaAs makes a challenge for the epitaxial growth even by the most advanced semiconductor technologies-molecular beam epitaxy (MBE) and MOCVD [18,19].…”

Section: Introductionmentioning

confidence: 99%

P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

Jin

Chia

Liu

et al. 2016

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

Jin

Chia

Liu

et al. 2016

Applied Surface Science

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“…The use of AsH 3 has a strong effect on the Ge growth [7][8][9]. In our growth processes we found that even a small addition of some sccm of AsH 3 in the gas phase along with iBuGe is able to reduce the growth rate up to 10 times.…”

Section: Resultsmentioning

confidence: 63%

Epitaxial growth and electrical characterization of germanium

Bosi

Attolini

Ferrari

et al. 2011

Cryst. Res. Technol.

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Vertical mesa junctions were obtained on the above structures by using conventional photolithographic and evaporation techniques. The junctions were characterized by I-V measurements under dark and illumination conditions and by EBIC technique. It has been observed that the samples grown at lower temperature showed better rectifying I-V characteristics and light conversion efficiency while EBIC results may suggest that a high As diffusion is present in the samples grown at higher temperature.

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“…In order to address adequate solutions for growing group IV and III‐V in the same MOVPE reactor, first experiments on homepitaxial germanium were funded by RSE (ex CESI RICERCA) already in 2007–2008. Within the APOLLON project, the research was extended by R. Jakomin et al., on a VEECO‐TurboDisk D180 MOVPE system, by reporting a detailed investigation on dopants incorporation in Ge layers grown on Ge and GaAs substrates and on the influence of temperature and growth rate on the structural quality and morphology of the Ge layers . In this paper, the effect of arsenic contamination in the epitaxial Ge layers associated to the III‐V reactor environment was addressed.…”

Section: Resultsmentioning

confidence: 99%

Novel approaches to MOVPE material deposition for high efficiency Multijunction Solar Cells

Timò

Abagnale

Armani

et al. 2014

Crystal Research and Technology

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Starting from a brief survey on the most important III‐V material engineering approaches which brought multijunction solar cells reaching an efficiency value of 44.7% to realization, new approaches to MOVPE material deposition are presented to further incrementing the solar cell performances and reduce the technology cost. A new MOVPE temperature profile tuning capability has been developed in order to maintain high thermal homogeneity at the wafer surface, also in the case of the deposition of strained structures, as well as to get a fast temperature control at the interfaces between arsenide and phosphide materials. Preliminary results on the possibility to combine group III‐V with group IV elements in the same MOVPE growth chamber in order to expand the band gap engineering possibilities are also presented and demonstrated at device level. As a proof of the concept, SiGe layers have been grown in the same MOVPE reactor used to grow III‐V compounds and InGaP/InGaAs/Ge Multijunction solar cell structures have been realized and characterized after SiGe deposition.

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p and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactor

Cited by 27 publications

References 20 publications

P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

Epitaxial growth and electrical characterization of germanium

Novel approaches to MOVPE material deposition for high efficiency Multijunction Solar Cells

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