P-Channel Tri-Gate FinFETs Featuring $\hbox{Ni}_{1 - y}\hbox{Pt}_{y} \hbox{SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance

Lee, Rinus Tek-Po; Tan, Kian-Ming; Lim, Andy Eu-Jin; Liow, Tsung-Yang; Samudra, G.; Chi, Dongzhi; Yeo, Yee-Chia

doi:10.1109/led.2008.920755

Cited by 19 publications

(9 citation statements)

References 22 publications

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“…[33] Based on the linear fitting, the slopes (k) of the two FETs are calculated to be ≈-1 (Figure 4n), indicating that the noise is dominated by the presence of bulk defects and consistent with Hooge mobility fluctuation (HMF) theory. [32,34] According to Hooge's empirical law, the normalized S I /I 2 DS could be expressed by Equation (2) [32,34] :…”

Section: Resultsmentioning

confidence: 99%

“…Moreover, the value of a-IGZO FET is not inferior to or even better than many other transistors, such as polysilicon, amorphous silicon, organic, and MOS. [34,35] This undoubtedly makes fiber arraybased transistors highly competitive in the field of electronic devices. For example, a high-quality and stable device can effectively shield itself from additional factors and respond only to the target, which meets the requirements for constructing a highly sensitive sensing device (As demonstrated in Figure S8, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

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Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

He,

Zhu

et al. 2023

Adv Funct Materials

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Metal oxide field‐effect transistors (MOFETs) represent a promising technology for applications in existing but alsoemerging large‐area electronics. Simultaneously, the rise of 1D nanomaterials with unique properties, represented by nanofibers (NFs), has also energized research. Thus, developing 1D nanofiber networks (NFNs) to act as the potential building blocks for use in fundamental elements of transistors is considered to be a promising approach torealize high‐performance 1D electronics. However, high processing temperatures and disordered nanofiber distribution represent two remaining technical challenges. Here, electrospun highly aligned IGZO (a‐IGZO) nanofiber arrays with low‐thermal‐budget of 350 °C and impressive device characteristics are achieved, including a μFE of 5.63 cm2 V–1 s–1 and superior on/off current ratio of ≈107. When ALD‐derived high‐k HfAlOx thin films are employed as gate dielectrics, the source/drain voltage (VDS) can be substantially reduced by ten times to a range of only 03 V, along with a three times improvement in mobility to a respectable value of 15.9 cm2 V–1 s–1. Successful integrations of logic operation, sensor, and flexible devices implies the potential prospect of a‐IGZO NFN FETs in multifunctional electronics. The strategy for combining cryogenic processes and parallel arrays provides a feasible and reliable route in building future low‐power, high‐performance flexible electronics.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

He,

Zhu

et al. 2023

Adv Funct Materials

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“…N ICKEL-BASED self-aligned silicides (salicides) formed on silicon germanium (Si 1−x Ge x ) have attracted a growing interest for contact metallization in the current deepsubmicrometer integrated circuits (ICs) [1], [2]. As the dimensions of advanced MOSFETs are continuously scaled down, application of Si 1−x Ge x source and drain stressors is known to enhance the performance of the p-channel by strain engineering technique [1], [3].…”

Section: Introductionmentioning

confidence: 99%

“…As the dimensions of advanced MOSFETs are continuously scaled down, application of Si 1−x Ge x source and drain stressors is known to enhance the performance of the p-channel by strain engineering technique [1], [3]. Ni germanosilicide (NiSi 1−x Ge x ) formed on Si 1−x Ge x is the desired phase in the Ni-Si-Ge system due to its low resistivity.…”

Section: Introductionmentioning

confidence: 99%

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CESL-Stressor-Induced Morphological Instability of Pt-Dissolved Ni Germanosilicide Formed on Silicon Germanium Epilayer

Chen

Liu

et al. 2011

IEEE Electron Device Lett.

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The effect of CESL stressor on the morphological stability of the Pt-dissolved NiSi 1−x Ge x films formed on Si 0.72 Ge 0.28 is demonstrated for the first time. In the CESL stress range studied, no high-resistivity phase is found in the silicide layer, but the R S of the NiSi 1−x Ge x films still increases with the stress boost from the CESL stressor due to the film agglomeration occurring at 400 • C. The tensile CESL stress results in a much steeper trend in the R S increases than the compressive one, which can be connected to the stressor-induced interface energy change manifested by the morphological observation on the film breaches of discrete NiSi 1−x Ge x films. The stressor-induced morphological instability may bring about the integration issue but can be mitigated by an intercalated Si layer between the NiSi 1−x Ge x film and Si 0.72 Ge 0.28 .

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Silicon Devices and Process Integration

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P-Channel Tri-Gate FinFETs Featuring $\hbox{Ni}_{1 - y}\hbox{Pt}_{y} \hbox{SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance

Cited by 19 publications

References 22 publications

Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

CESL-Stressor-Induced Morphological Instability of Pt-Dissolved Ni Germanosilicide Formed on Silicon Germanium Epilayer

Enabling Processes and Integration

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