p-GaN/n-IGZO self-powered ultraviolet photodetector with ultralow dark current and high sensitivity

CuO nanostructure-decorated InGaN nanorods for selective H2S gas detection

“…The p-CuO/InGaN NRs showed a higher UV-dark on/off ratio (126) than that of the pristine InGaN NRs due to a built-in potential at the heterostructure. 33 The high photocurrent is nearly constant, indicating high stability and reversibility of the p-CuO/InGaN NRs. Therefore, p-CuO/n-InGaN NRs can play a pivotal role in optoelectronic gas sensing applications.…”

Low-Voltage IGZO Field-Effect Ultraviolet Photodiode

“…To concretely reveal the achievements of our a-IGZO field-effect PD, some critical parameters are summarized and compared with previous results (Table 1). With such a low reverse bias of −0.1 V, the peak responsivity of our FED is much higher than the self-powered devices, [5][6][7]16,17,28,29] and even comparable with those driven by the bias as large as 5 V, [28,30] indicating its great potential as a decent UV detector with low power consumption.…”

“…[9][10][11][12][13][14] However, owing to the asymmetry doping of oxide materials, [15] only metal/semiconductor Schottky diode or p-n heterojunction structure is feasible for self-powered UV PD at present. [5][6][7]16] The harsh demands for the interface quality and limited built-in electric potential make the responsivity of the self-powered UV PDs far below 1 A/W. [5][6][7]16,17] Therefore, it is necessary to develop new device architecture to balance the power consumption and device performance.…”

“…[5][6][7]16] The harsh demands for the interface quality and limited built-in electric potential make the responsivity of the self-powered UV PDs far below 1 A/W. [5][6][7]16,17] Therefore, it is necessary to develop new device architecture to balance the power consumption and device performance.…”

“…NiO/a-IGZO p-n 7.4 × 10 4 @±4 V 365 ∼ 10 2 @−4 V 0.029 @0 V [7] a-IGZO/p-Si p-n 330 @±1 V 325 181 @−3 V 8.0 × 10 −3 @0 V 6.72 @−5 V [28] GaN/IGZO p-n > 10 5 @±5 V 340 > 10 5 @0 V 0.26 @0 V [16] Ti/𝛽-Ga 2 O 3 /Ni Schottky ∼ 20 @±10 V 254 > 10 5 @−10 V 0.73 × 10 −3 @0 V [29] ITO/IGZO/ITO MSM -405 2.9 @5 V 6 @5 V [30] DAL a-IGZO FED 1.09 × 10 9 @±5V 300 991 @−0.1 V 1.89 @−0.1 V This work…”