P-I-N CdTe Gamma Ray Detectors by Liquid Phase Epitaxy (LPE)

Shin, Seung Heon; Niizawa, G. T.; Pasko, J. G.; Bostrup, G.; Ryan, F. J.; Khoshnevisan, M.; Westmark, C. I.; Fuller, Charles T.

doi:10.1109/tns.1985.4336879

Cited by 24 publications

(3 citation statements)

References 8 publications

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“…CdTe has an even higher effective atomic number, 50, than GaAs, and an even wider bandgap, 1.5 eV, and a density of 5.85 gcm −3 . In principle, these properties suggest CdTe may be even more effective at absorbing ionising radiation while also capable of room temperature operation [7,9,16,17].…”

Section: Jinst 14 P10018mentioning

confidence: 99%

Direct measurement of strontium 90 in groundwater: geometry optimisation of a photodiode based detector

Turkington¹,

Gamage²,

Graham³

2019

J. Inst.

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This paper examines the feasibility of detecting strontium 90 in groundwater directly with photodiodes and considers the physical parameters which maximise radiation absorption within the detector. Geant4 simulations were used to draw comparisons between silicon, gallium arsenide and cadmium telluride detectors of varying surface area and thickness. Detectors were compared in their ability to absorb point and scattered sources of radiation. The results indicate that a detector, of 10 mm 2 surface area, and 1 mm thickness offered the highest detection efficiency in a contaminated groundwater simulation. 1 mm thick and 100 mm 2 detectors cadmium telluride and gallium arsenide detectors were modelled in a groundwater borehole scenario. Each material offered similar detection efficiency, but the greater backscattering effect in cadmium telluride resulted in a greater peak at lower energies compared to that observed in gallium arsenide. K: Detector design and construction technologies and materials; Detector modelling and simulations I (interaction of radiation with matter, interaction of photons with matter, interaction of hadrons with matter, etc); Interaction of radiation with matter; Solid state detectors 1Corresponding author.

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Section: Jinst 14 P10018mentioning

confidence: 99%

Direct measurement of strontium 90 in groundwater: geometry optimisation of a photodiode based detector

Turkington¹,

Gamage²,

Graham³

2019

J. Inst.

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“…1,2 The charge collection efficiency and, hence, the energy resolution of the detector, can be improved by operating it at a high applied bias. Along with the recent advances in crystal growth technology, the performance of CdTe detectors has significantly improved.…”

Section: Improved Spectrometric Performance Of Cdte Radiation Detectomentioning

confidence: 99%

Improved spectrometric performance of CdTe radiation detectors in a p-i-n design

Niraula

Mochizuki

Aoki

et al. 1999

Applied Physics Letters

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CdTe radiation detectors were fabricated using a p-i-n design and a significant improvement in the spectral properties was obtained during room temperature operation. An iodine doped n-CdTe layer was grown on the Te faces of the (111) oriented high resistivity CdTe crystals at the low substrate temperature of 150 °C. An aluminum electrode was evaporated on the n-CdTe side for the n-type contact, while a gold electrode on the opposite side acted as the p-type contact. Very low leakage currents, typically 60 pA/mm2, were attained at room temperature (25 °C) for an applied reverse bias of 250 V. Detectors exhibited excellent spectral responses with an energy resolution of 1.42, 1.7, and 4.2 keV FWHM at 59.5, 122, and 662 keV γ peaks, respectively.

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“…[3][4][5][6] Shin et al fabricated p-i-n detectors by sandwitching the CdTe substrate with p-type and n-type heteroepitaxial HgCdTe layers. 6) Niraula et al grew an iodine doped nCdTe layer on the Te-face of CdTe by a metalorganic chemical vapor deposition (MOCVD) technique.…”

Section: Introductionmentioning

confidence: 99%

Microstructural Analysis of CdTe Radiation Detectors with Indium Electrodes

Moriyama

Kunisu

Kiyamu³

et al. 2005

Mater. Trans.

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In order to understand the formation mechanisms of indium contacts which were previously developed for CdTe radiation detectors with p-i-n structure, microstructure of the indium contacts which were deposited at various substrate temperatures on the p-CdTe substrates and subsequently annealed at temperature ranging from 200 to 400 C were analyzed by X-ray diffraction and transmission electron microscopy. The microstructural analysis revealed that reactions between CdTe and In were enhanced by the substrate heating during deposition and growth of In 4 Te 3 or InTe compounds on the CdTe surface was observed. Current leakage and stability of the CdTe radiation detectors were strongly correlated with the microstructure of CdTe/contact interfaces. The indium contacts, which were deposited at substrate temperature of 400 or 350 C and subsequently annealed at 350 C for 1 h in vacuum, displayed rectifying I-V behaviors and satisfied the device requirement. In addition, the excellent thermal stability of these contacts was observed. We found that the formation of the InTe compounds was essential for production of the p-i-n CdTe detector devices which require highly reliable rectifying contacts.

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P-I-N CdTe Gamma Ray Detectors by Liquid Phase Epitaxy (LPE)

Cited by 24 publications

References 8 publications

Direct measurement of strontium 90 in groundwater: geometry optimisation of a photodiode based detector

Direct measurement of strontium 90 in groundwater: geometry optimisation of a photodiode based detector

Improved spectrometric performance of CdTe radiation detectors in a p-i-n design

Microstructural Analysis of CdTe Radiation Detectors with Indium Electrodes

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