2011
DOI: 10.4028/www.scientific.net/amr.222.225
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P-N Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells Applications

Abstract: The research report is devoted to the development of a new method of nanostructures formation in ITO/p-Si/Al structure with powerful laser radiation and study of its optical and electrical properties for solar cells applications. It was shown that after the structure irradiation by Nd:YAG laser second harmonic, dark current voltage characteristics become diode-like. Increase of ITO/p-Si/Al solar cell efficiency after irradiation by the laser, using photocurrent voltage characteristic method, was shown.

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Cited by 8 publications
(7 citation statements)
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“…For elementary semiconductors, such as Si and Ge crystals, mechanical stress already exists due to p-n junction formation, which depends on doping level and effective diameter of the impurities in the atoms. Moreover, the possibility to form p-n junction in p-Si [16-18] and p-Ge [19] by strongly absorbed laser has been shown. We propose the following mechanism of nanocones formation in pure elementary semiconductor: at the first stage, generation and redistribution of intrinsic point defects in temperature gradient field do occur.…”
Section: Resultsmentioning
confidence: 99%
“…For elementary semiconductors, such as Si and Ge crystals, mechanical stress already exists due to p-n junction formation, which depends on doping level and effective diameter of the impurities in the atoms. Moreover, the possibility to form p-n junction in p-Si [16-18] and p-Ge [19] by strongly absorbed laser has been shown. We propose the following mechanism of nanocones formation in pure elementary semiconductor: at the first stage, generation and redistribution of intrinsic point defects in temperature gradient field do occur.…”
Section: Resultsmentioning
confidence: 99%
“…ture gradient field. At the same time, nanostructure on the surface of Ge, Si, [5] and CdZnTe [17] and graded bandgap in CdZnTe with opposite direction of gradient at low intensity LR, is described in paper [16]. In our experiment [17] it is formed at higher intensities, for example, nanostructure is formed at intensities I > 4.0 MW/cm …”
mentioning
confidence: 62%
“…In the previous papers [5][6][7], we have shown another possibility to form cone-like nanostructures with quantum dots' properties using nanosecond pulsed laser radiation (LR). The main advantages of this laser technology for nanostructures formation are following: low cost, one step and short time process of nanostructures formation (there is a possibility to form nanostructures during one single laser pulse).…”
mentioning
confidence: 99%
“…Therefore, it was supposed that inversion of conductivity type takes place, and 'hills' of the periodic structures are of n-type. Possibility to invert conductivity type by laser radiation was shown in several p- and n-type semiconductors: p-Si [13-15], p-CdTe [16], p-InSb [17,18], p-InAs [19], p-PbSe [20], p-Ge [21], and n-HgCdTe [22]. Different mechanisms have been proposed to explain the nature of inversion of conductivity type, for example, impurities' segregation, defects' generation [20], amorphization [23] and oxygen-related donor generation [14].…”
Section: Resultsmentioning
confidence: 99%