P-nitro-benzylidenemalononitrile molecule importance in the enhancement of the optical and the electrical properties of thin film based on PVK for optoelectronic applications

Saidi, Hamza; Aloui, Walid; Dhifaoui, Hassen; Bouazizi, Abdelaziz; Boubaker, Taoufik

doi:10.1007/s10854-019-01423-9

Cited by 4 publications

(1 citation statement)

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“…For the LUMO level energy from 3.5 eV to 3.7 eV, it was estimated that the work functions of ITO and Al should have been in the range from 4.3 eV to 4.5 eV and from 3.9 eV to 4.1 eV and, respectively (see Table 3). These values are in good agreement with the values of ITO and Al work functions most often used in the analysis of the operating organic electronics devices [47][48][49]. Thus, the results reported here can be considered as a strong argument for the correctness of the drift-diffusion current model adopted for the analysis of the presented experimental results.…”

Section: Lumo E [Ev] Homosupporting

confidence: 88%

Electron Transport in Naphthalene Diimide Derivatives

et al. 2021

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Two naphthalene diimides derivatives containing two different (alkyl and alkoxyphenyl) N-substituents were studied, namely, N,N′-bis(sec-butyl)-1,4,5,8-naphthalenetetracarboxylic acid diimide (NDI-s-Bu) and N,N′-bis(4-n-hexyloxyphenyl)-1,4,5,8-naphthalenetetracarboxylic acid diimide (NDI-4-n-OHePh). These compounds are known to exhibit electron transport due to their electron-deficient character evidenced by high electron affinity (EA) values, determined by electrochemical methods and a low-lying lowest unoccupied molecular orbital (LUMO) level, predicted by density functional theory (DFT) calculations. These parameters make the studied organic semiconductors stable in operating conditions and resistant to electron trapping, facilitating, in this manner, electron transport in thin solid layers. Current–voltage characteristics, obtained for the manufactured electron-only devices operating in the low voltage range, yielded mobilities of 4.3 × 10−4 cm2V−1s−1 and 4.6 × 10−6 cm2V−1s−1 for (NDI-s-Bu) and (NDI-4-n-OHePh), respectively. Their electron transport characteristics were described using the drift–diffusion model. The studied organic semiconductors can be considered as excellent candidates for the electron transporting layers in organic photovoltaic cells and light-emitting diodes

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Section: Lumo E [Ev] Homosupporting

confidence: 88%