P-silicon thin film fabricated by magnetron sputtering and aluminium induced crystallization for Schottky silicon solar cells

Shekoofa, Omid; Wang, Jian; Li, Dejie; Luo, Yi; Sun, Changzheng; Hao, Zhibiao; Han, Yanjun; Xiong, Bing; Wang, Lai; Li, Hongtao

doi:10.1016/j.mssp.2017.06.008

Cited by 10 publications

(1 citation statement)

References 39 publications

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“…The mechanism of silicon crystallization by adding metals has been extensively studied, and this process has been widely used to prepare polycrystalline silicon layers with p-type doping using atoms such as aluminum (Maity, 2019;Shekoofa, 2017), copper (Shekoofa et al, 2020), tin (Neimash, 2014), and nickel (Schmidt et al, 2009). However, the use of this method for n-type doping requires further investigation and optimization, due to the special properties of materials that can create n-type doping.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of N-Type Nanocrystalline Silicon Thin-Film by Magnetron Sputtering and Antimony Induced Crystallization

Shekoofa¹,

Wang²,

Li³

2023

AAES

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The fabrication of n-type nanocrystalline silicon thin films using magnetron sputtering and crystallization by adding antimony and thermal treatment is presented in this article. Firstly, a short overview about thin film deposition methods, along with the advantages and disadvantages of the magnetron sputtering, is provided. Then, the technique of adding metals for recrystallization of amorphous silicon is described, and the necessity of using antimony for obtaining n-type nanocrystalline silicon along with its characteristics is discussed. Next, the process of thin film deposition using magnetron sputtering and the production of n-type nanocrystalline silicon on a quartz substrate, by antimony induced crystallization, is explained. Subsequently, the characterization process and necessary measurements to confirm the crystallization of the nanocrystalline silicon layer and determine its crystalline properties are presented. For ease of electrical characterization, a simple n/p junction Schottky solar cell is fabricated using the produced nanocrystalline silicon layer on a p-type monocrystalline silicon wafer. In addition to nanocrystalline properties, the optical and electrical characteristics of this cell are also investigated. The measurements show that with the proposed method, a fine grains nanocrystalline silicon layer with an average grain size of 20 nm was formed in the <111> direction. J-V characteristic measurement shows the creation of a solar cell with conversion efficiency of 1.39%, open circuit voltage of 265mV and current density of 16.32mA/cm2. These results confirm that antimony can be used in the process of crystallizing amorphous thin film silicon obtained from magnetron sputtering and converting it into n-type nanocrystalline silicon.

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Section: Introductionmentioning

confidence: 99%

Fabrication of N-Type Nanocrystalline Silicon Thin-Film by Magnetron Sputtering and Antimony Induced Crystallization

Shekoofa¹,

Wang²,

Li³

2023

AAES

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Scalable Approach for Amorphous Thin Silicon Films Near‐IR Laser‐Induced Crystallization Using Nickel Absorption Layer

Serdobintsev

Kozhevnikov

Starodubov

et al. 2019

Physica Status Solidi (a)

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Technology for thin polycrystalline silicon films preparation is crucial for development of novel semiconductor devices, including flexible electronics. A method for thin polycrystalline silicon film preparation utilizing deposited nickel absorption layer which allows use of inexpensive 1064 nm pulsed YAG: Nd laser for laser annealing of magnetron-sputtered amorphous silicon is reported here. Film morphology changes are visualized with scanning electron microscopy, its chemical composition and Ni fate upon laser irradiation are studied using X-ray energy dispersion analysis and secondary ion mass spectrometry. Silicon crystalline structure changes and its homogeneity are characterized using Raman spectroscopy utilizing mapped spectral measurements. Range of laser radiation energy fluence (J cm À2 ) is established which allowed for preparation of fully polycrystalline silicon film with crystalline silicon Raman peak position and width comparable to that of single-crystalline material. Nickel film is found to ablate substantially upon irradiation, leaving remains that can be easily removed by chemical etching.

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Crystallization of P Type Amorphous Silicon (a-Si: H) by AIC Method: Effect of Aluminum Thickness

Kezzoula

Kechouane

Mohammed‐Brahim

et al. 2019

Silicon

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P-silicon thin film fabricated by magnetron sputtering and aluminium induced crystallization for Schottky silicon solar cells

Cited by 10 publications

References 39 publications

Fabrication of N-Type Nanocrystalline Silicon Thin-Film by Magnetron Sputtering and Antimony Induced Crystallization

Fabrication of N-Type Nanocrystalline Silicon Thin-Film by Magnetron Sputtering and Antimony Induced Crystallization

Scalable Approach for Amorphous Thin Silicon Films Near‐IR Laser‐Induced Crystallization Using Nickel Absorption Layer

Crystallization of P Type Amorphous Silicon (a-Si: H) by AIC Method: Effect of Aluminum Thickness

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