p- to n-type conductivity transition in 1.0 eV GaInNAs solar cells controlled by the V/III ratio

Langer, Fabian; Perl, Svenja; Höfling, Sven; Kamp, M.

doi:10.1063/1.4909507

Cited by 12 publications

(8 citation statements)

References 19 publications

(21 reference statements)

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“…This directly indicates a movement of the pn-junction location and that the conductivity type of the GaInNAs layer must have changed its character upon annealing. Conductivity type changes in GaInNAs have also been seen by other authors in thermally annealed MOCVD-grown GaInNAs [17,18] and in MBE-grown GaInNAs [19].…”

Section: P-i-n Solar Cellssupporting

confidence: 79%

High Efficiency Dilute Nitride Solar Cells: Simulations Meet Experiments

Tukiainen

Aho

Polojärvi

et al. 2016

JGE

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Parameter extraction procedure and simulation of dilute nitride solar cells are reported. Using PC1D simulation and fitting to experimental current-voltage and external quantum efficiency data, we retrieve the phenomenological material parameters for GaInNAs solar cells. Based on these, we have constructed a model that can explain the changes in short circuit current and open circuit voltage of n-i-p solar cells subjected to rapid thermal annealing. The model reveals that non-annealed MBE-grown GaInNAs material has an n-type doping that evolves to p-type upon rapid thermal annealing. The change of doping type and the shift of the physical location of the pn-junction were confirmed by Kelvin-probe force microscopy. The PC1D modelling was found to work well also for GaInNAs p-in solar cells with opposite polarity. It was also found that the GaInNAs lower doping levels in p-in solar cells grown at lowered As/III flux ratios were associated with increased carrier lifetimes.

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Section: P-i-n Solar Cellssupporting

confidence: 79%

High Efficiency Dilute Nitride Solar Cells: Simulations Meet Experiments

Tukiainen

Aho

Polojärvi

et al. 2016

JGE

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“…The explanation of conductivity transition is a matter of debate in recent times since the factors causing this phenomenon are manifold, such as temperature [4][5][6][7], gas concentration [4][5][6][7][8][9] composition [4,10], and impurity concentration [11,12]. However, there is no doubt that the conductivity transition is related to the surface charge effect, leading to the transformation of the type of dominant charge carriers [13][14].…”

Section: Introductionmentioning

confidence: 99%

Cost-effective fabrication of polycrystalline TiO2 with tunable n/p response for selective hydrogen monitoring

Haidry

Sun

Saruhan

et al. 2018

Sensors and Actuators B: Chemical

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In this report, we demonstrate a simple and cost-effective strategy to prepare polycrystalline rutile TiO2 based gas sensors with tunable n/p type conductivity inversion depending on gas concentration, operating temperature and applied voltage. The effect of surface modification by Ag and Ni thin film on structural, morphological and gas sensor characteristics is studied in detail. The sensors show excellent sensing performance in terms of sensitivity (~25% for 0.1 vol. % H2 diluted in technical air), selectivity (selectivity factor for 0.1 vol. % H2 is about ~24 against NH3, CH4, NO2 and ~8 for CO), stability (both long-term and short-term) and reaction times (~0.7 min for 0.1 vol. % H2). The aforementioned performance is recorded at 300 °C with applied voltage of 0.1 V. Excluding the power consumption of sensor heater-5 watt), this applied voltage 0.1 V can reduce the power-10 watt. We found a critical point, defined with threshold-concentration (CTh), threshold-temperature (TTh) and criticalvoltage (VC), at which the conductivity inverses from one kind to another, something intriguing to novel sensing phenomena that can be exploited to tailor the selectivity of the sensors. A physical-chemical sensing model is presented to understand the aforesaid peculiar occurrence.

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“…The results in this study seem to show that a lower As/Ga BEP ratio of 10 to 13 will give a better performance than higher As/Ga BEP ratio. Lower V/III ratio has also been reported to increase the performance of the GaInNAs PV cell [35] [36]. This may mean that a low V/III ratio is beneficial for dilute‐nitride growth.…”

Section: Resultsmentioning

confidence: 96%

Growth of 1‐eV GaNAsSb‐based photovoltaic cell on silicon substrate at different As/Ga beam equivalent pressure ratios

Leong

Tan

Loke

et al. 2015

Progress in Photovoltaics

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We report the performance of 1-eV GaNAsSb-based photovoltaic samples grown on a Si substrate using molecular beam epitaxy at different As/Ga beam equivalent pressure (BEP) ratios. The light current-voltage curve and spectral response of the samples were measured. The sample grown at an As/Ga BEP ratio of 10 showed the highest energy conversion efficiency with an open circuit voltage (V OC ) of 0.529 V and a short circuit current density of 17.0 mA/cm 2 . This measured V OC is the highest ever reported value in GaNAsSb 1-eV photovoltaic cell, resulting in the lowest ever reported E g /q-V OC of 0.50 eV. The increase in the As/Ga BEP ratio also resulted in an increase in the bandgap-voltage offset value (E g /q-V OC ) and a decrease in quantum efficiency up to As/Ga BEP ratio of 18.

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p- to n-type conductivity transition in 1.0 eV GaInNAs solar cells controlled by the V/III ratio

Abstract: Articles you may be interested inLuminescence based series resistance mapping of III-V multijunction solar cells

Cited by 12 publications

References 19 publications

High Efficiency Dilute Nitride Solar Cells: Simulations Meet Experiments

High Efficiency Dilute Nitride Solar Cells: Simulations Meet Experiments

Cost-effective fabrication of polycrystalline TiO2 with tunable n/p response for selective hydrogen monitoring

Growth of 1‐eV GaNAsSb‐based photovoltaic cell on silicon substrate at different As/Ga beam equivalent pressure ratios

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