2012
DOI: 10.1063/1.4769097
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P-type behavior of Sb doped ZnO from p-n-p memory structure

Abstract: Antimony (Sb) doped p-type ZnO was studied by using Sb-ZnO/ZnO/Sb-ZnO p-n-p structure. Secondary ion mass spectrometry result confirmed the formation of the structure. Rectifying current-voltage characteristics between Sb-ZnO and undoped ZnO layers were achieved, proving the p-n junction was formed. The p-type behavior from the p-n-p structure was studied by using the capacitance-voltage measurement and small signal model. The voltage operation led to the charging/discharging of the structure, showing nonvolat… Show more

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Cited by 12 publications
(12 citation statements)
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“…Past proposals therefore focused on quasi-deterministic sources of entangled photon pairs, which can in principle be realized using individual emitters such as atoms or quantum dots [14], or by combining parametric downconversion with strong nonlinearities [15]. While many of these approaches seem promising in the longer term, they all pose significant practical challenges in the short and medium term.…”
Section: Introductionmentioning
confidence: 99%
“…Past proposals therefore focused on quasi-deterministic sources of entangled photon pairs, which can in principle be realized using individual emitters such as atoms or quantum dots [14], or by combining parametric downconversion with strong nonlinearities [15]. While many of these approaches seem promising in the longer term, they all pose significant practical challenges in the short and medium term.…”
Section: Introductionmentioning
confidence: 99%
“…Here, we present an NP/NM synthesis platform based on an acoustofluidic (i.e., the fusion of acoustics and microfluidics) strategy for rapid, adaptable, and complete mixing of reagents. Our acoustofluidic device actively blends reagents together utilizing acoustic streaming induced by the oscillation of sharp‐edge structures in the microchannel.…”
Section: Introductionmentioning
confidence: 99%
“…Different values, ranging from 5 to 110 cm 2 /V s, were reported for the electron mobility in ZnO and in ZnO:Sb. 9,15,39 The calculated majority charge carriers concentration in the above range is too low for Sb doping to 5 at. % if all Sb atoms are acting as donors.…”
Section: Resultsmentioning
confidence: 96%
“…3,4 In order to establish reliable p-type doping of ZnO, special attention has been focused on the group-V elements, including N, P, As, and Sb, due to the possibility of creating p-type conduction. Although p-type behavior has been reported by different research groups for these doped elements, especially Sb-doped ZnO (ZnO:Sb), [5][6][7][8][9][10][11] stability and reproducibility of the Sb doped p-type conductivity are still under question. Moreover, the electrical properties change from p-type to n-type, as the Sb content decreases in the ZnO:Sb thin films.…”
Section: Introductionmentioning
confidence: 99%