P-Type Characteristic of Nitrogen-Doped ZnO Films

Ng, Zi Neng; Chan, Kah‐Yoong; Muslimin, Shahruddin; Knipp, Dietmar

doi:10.1007/s11664-018-6468-2

Cited by 24 publications

(9 citation statements)

References 53 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Most N-doped ZnO studies involve films rather than colloidal nanoparticles. 173,174 There are only a handful of reports that demonstrate the ability to form nonaggregated N-doped ZnO NPs. 75,142,143,175,176 Macı ́as-Sańchez et al synthesized nitrogen-doped zinc oxide nanoparticles from zinc acetate and urea as precursors while using ammonium hydroxide as the nitrogen source.…”

Section: Doping In Metal Oxide Nanoparticlesmentioning

confidence: 99%

Visible-Light-Active Doped Metal Oxide Nanoparticles: Review of their Synthesis, Properties, and Applications

Medhi

Marquez

Lee

2020

ACS Appl. Nano Mater.

235

107

View full text Add to dashboard Cite

Metal oxide semiconductors with a bandgap between 2 and 4 eV are an important class of compounds in the electronics industry and for photocatalysis. With the demand for these materials expanding rapidly, especially in the field of photocatalysis, the fabrication of nanoscale metal oxide particles, which increases the surface-to-volume ratio and thereby reduces the materials costs, is an emphasis of current research. For the purpose of photocatalysis, another important quality is the ability to absorb light efficiently. However, due to the wide bandgap of metal oxide semiconductors, the absorptions are limited to the UV region. Conveniently, a wider range of wavelengths and physical properties can be enabled by doping these metal oxide nanoparticles. Furthermore, the synthesis of doped metal oxides in nanoparticle form offers utility in an expansive array of systems, substrates, and dispersion media. However, the reliable synthesis of nanosized colloidal particles of doped metal oxides remains an ongoing challenge for materials researchers. This manuscript gives a concise overview of research conducted regarding the synthesis of visible-light-active doped metal oxide nanoparticles (NPs) and analyzes how doping impacts the optical properties, making them active in the visible to near-infrared regions. The effects of doping on applications are also summarized. Given that the most commonly doped metal oxide materials are TiO 2 and ZnO, this review highlights both anion-and cation-doped TiO 2 and ZnO nanoparticles. In addition, doped perovskite nanoparticles (e.g., BaTiO 3 and SrTiO 3 ) as well as some of the lesser studied doped metal oxide nanoparticle systems are covered. This work is intended to provide not only a broad overview of existing doped metal oxide nanoparticles but also a foundation for the development of semiconducting nanoparticle architectures for next-generation applications.

show abstract

Section: Doping In Metal Oxide Nanoparticlesmentioning

confidence: 99%

Visible-Light-Active Doped Metal Oxide Nanoparticles: Review of their Synthesis, Properties, and Applications

Medhi

Marquez

Lee

2020

ACS Appl. Nano Mater.

235

107

View full text Add to dashboard Cite

show abstract

“…5,6 However, there are few reports of p-type ZnO available in the literature. 7,8 Therefore, one of the best solutions for fabricating oxide-based solar cells will be to study a ZnO/CuO heterojunction as a stable p-n junction. 3,9,10 Previously, few efforts have been focused on fabricating p-CuO/n-ZnO heterojunctions [11][12][13] even though simple estimates predict large valence band offsets (VBOs) and conduction band offsets (CBOs) between the two semiconductors.…”

Section: Introductionmentioning

confidence: 99%

“…Due to the slightly smaller ionic radius of Co ++ (58 pm) than Zn ++ (60 pm) under the same coordination number, as in wurtzite ZnO, incorporation of cobalt into ZnO layer to form Zn 1Àx Co x O would signicantly alter the bandgap mainly due to the liing of the conduction band minimum (CBM) and valence band maximum (VBM). 8,12 Using this composition, the Fermi level in the Zn 1Àx Co x O layer would move up, which leads to the enhanced open-circuit voltage (V OC ), which in turn will result in an enhancement in device power conversion efficiency (PCE).…”

Section: Introductionmentioning

confidence: 99%

Enhancement in the performance of nanostructured CuO–ZnO solar cells by band alignment

et al. 2020

View full text Add to dashboard Cite

show abstract

“…In general, in the PL spectra of ZnO films, two emission bands can be observed: one is in the UV region within the 361–369 nm range and the second band is in the visible range of 450–550 nm [ 32 , 37 ]. As the excitation source (Xe bulb lamp) was not intense enough to excite the transitions associated with the optical band gap energy, the first characteristic band was not observed.…”

Section: Resultsmentioning

confidence: 99%

Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

et al. 2021

View full text Add to dashboard Cite

Nitrogen-doped ZnO (ZnO:N) thin films, deposited on Si(100) substrates by RF magnetron sputtering in a gas mixture of argon, oxygen, and nitrogen at different ratios followed by Rapid Thermal Annealing (RTA) at 400 °C and 550 °C, were studied in the present work. Raman and photoluminescence spectroscopic analyses showed that introduction of N into the ZnO matrix generated defects related to oxygen and zinc vacancies and interstitials. These defects were deep levels which contributed to the electron transport properties of the ZnO:N films, studied by analyzing the current–voltage characteristics of metal–insulator–semiconductor structures with ZnO:N films, measured at 298 and 77 K. At the appliedtechnological conditions of deposition and subsequent RTA at 400 °C n-type ZnO:N films were formed, while RTA at 550 °C transformed the n-ZnO:N films to p-ZnO:N ones. The charge transport in both types of ZnO:N films was carried out via deep levels in the ZnO energy gap. The density of the deep levels was in the order of 1019 cm−3. In the temperature range of 77–298 K, the electron transport mechanism in the ZnO:N films was predominantly intertrap tunneling, but thermally activated hopping also took place.

show abstract

P-Type Characteristic of Nitrogen-Doped ZnO Films

Cited by 24 publications

References 53 publications

Visible-Light-Active Doped Metal Oxide Nanoparticles: Review of their Synthesis, Properties, and Applications

Visible-Light-Active Doped Metal Oxide Nanoparticles: Review of their Synthesis, Properties, and Applications

Enhancement in the performance of nanostructured CuO–ZnO solar cells by band alignment

Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

Contact Info

Product

Resources

About