p
          -type conduction in beryllium-implanted hexagonal boron nitride films

He, Bang-Quan; Zhang, Wenjun; Yao, Zhiqiang; Chong, Y.M.; Yang, Yoon Mee; Ye, Q.; Pan, Xiaohui; Zapien, Juan Antonio; Bello, I.; Lee, S. T.; Gerhards, I.; Zutz, Hayo; Hofsäß, H.

doi:10.1063/1.3276065

Cited by 43 publications

(37 citation statements)

References 26 publications

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“…However, no band-edge photoluminescence emissions have been observed in hBN thin films synthesized previously by various methods. 6,[12][13][14][15] As with other semiconductor materials in their development stages, realizing the band-edge photoluminescence emission at room temperature is a prerequisite in research and development towards practical applications of hBN. Metal organic chemical vapor deposition (MOCVD) is a proven technique with the ability to precisely and reproducibly deposit very thin layers (single atomic layers) to thick epilayers (tens of lm in thickness).…”

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confidence: 99%

Band-edge transitions in hexagonal boron nitride epilayers

Majety

Cao

et al. 2012

Appl. Phys. Lett.

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Effects of scattering on two-dimensional electron gases in InGaAs/InAlAs quantum wells J. Appl. Phys. 112, 023713 (2012) High efficiency ultraviolet emission from AlxGa1−xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy Appl. Phys. Lett. 101, 043115 (2012) Current transport in nonpolar a-plane InN/GaN heterostructures Schottky junction J. Appl. Phys. 112, 023706 (2012) Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells J. Appl. Phys. 112, 023108 (2012) Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequencytemperature mapping Hexagonal boron nitride (hBN) epilayers have been synthesized on sapphire substrates by metal-organic chemical vapor deposition (MOCVD). These MOCVD grown epilayers exhibit highly efficient band-edge photoluminescence (PL) emission lines centered at around 5.5 eV. The results represent a remarkable improvement over the optical qualities of hBN films synthesized by different methods in the past. It was observed that the emission of hBN at 10 K is about 500 times stronger than that of high quality AlN epilayers. Polarization-resolved PL spectroscopy revealed that hBN epilayers are predominantly a surface emission material, in which the band-edge emission with electric field perpendicular to the c-axis (E

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confidence: 99%

Band-edge transitions in hexagonal boron nitride epilayers

Majety

Cao

et al. 2012

Appl. Phys. Lett.

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“…One requirement that applies to h-BN in optical device applications is that it has high optical transmittance because the transmittance strongly determines the power conversion efficiency via the light extraction efficiency. While there have been several previous reports of sputter deposition of h-BN [9,26], the optical transmittance values of the reported layers in the DUV region were very low when compared with that of similar layers grown by MOCVD. In this paper, we report the realization of thick h-BN layers with high transmittance in the DUV region on an Al 0.7 Ga 0.3 N template that were deposited by RF magnetron sputtering under low temperature conditions.…”

Section: Introductionmentioning

confidence: 64%

“…More importantly, h-BN has a unique propensity for p-type doping. Previous reports have shown that good p-type conductivity can be achieved in h-BN via doping with Zn, Be, and Mg [9][10][11][12]. It has also been reported that the boron vacancies are acceptor-like defects with an energy level of approximately 150 meV above the valence band edge [13].…”

Section: Introductionmentioning

confidence: 99%

Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

2019

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Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thick h-BN films (>200 nm) on Al0.7Ga0.3N templates via radio-frequency sputtering, along with the realization of ultrahigh transmittance in the DUV region. The fraction of the gas mixture (Ar/N2) was varied to investigate its effects on the optical transmittance of BN. DUV light transmittance of as high as 94% was achieved at 265 nm. This value could be further enhanced to exceed 98% by a post-annealing treatment at 800 °C in a N2 ambient for 20 min. The phase of the highly DUV–transparent BN film was determined to be a purely hexagonal structure via Raman spectra measurements. More importantly, these deposition processes were performed at a low temperature (300 °C), which can provide protection from device performance degradation when applied to actual devices.

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“…For future technological applications, physical vapor deposition methods using pulsed lasers, ion beams, or magnetron sputtering are attractive for h‐BN film growth since physical vapor deposition is adaptable to large‐scale manufacturing and modern lithography processes. Since overall device performance is dominated by the degree of film homogeneity and defects, methods need to be found that produce h‐BN thin films of controlled thickness, with large h‐BN crystalline grains uniformly distributed over large substrate areas.…”

Section: Introductionmentioning

confidence: 99%

“…While the growth of h‐BN by sputter deposition has been demonstrated several times, films are typically highly non‐uniform with a heterogeneous morphology. In this paper, we report results concerning h‐BN film crystallinity and surface morphology as probed by X‐ray diffraction (XRD) and scanning electron microscope (SEM), and it is shown that the use of a DC substrate bias during the reactive magnetron sputtering process substantially improves both the crystallinity and uniformity of the h‐BN thin films.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Crystallinity of h‐BN Films Induced by Substrate Bias During Magnetron Sputtering

Stewart

2017

Physica Status Solidi (b)

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The synthesis of uniform, highly crystalline thin films of hexagonal boron nitride (h‐BN) is an important step for its applications in multilayered devices with other emerging 2D materials. We report on the growth of high purity h‐BN by reactive magnetron sputtering from a pure B target in an Ar/N2 plasma. Enhanced h‐BN crystallinity on Ni substrates was achieved using a negative DC substrate bias during deposition, which served to increase the energy of incident ions, causing higher adatom mobility and re‐sputtering of weakly bound species on the growth surface. Growth rates between 0.002 to 1.1 Å s−1 were observed as the power was varied from 10 to 200 W and the growth temperature was either room temperature or 850 °C. BN films grown on a r‐sapphire substrate or a silicon (100) wafer with native oxide were smooth but amorphous under all conditions. Crystalline growth was observed on unbiased Ni foil substrates heated to 850 °C provided the growth rate was below 0.01 Å s−1, but the films were a non‐uniform mixture of h‐BN crystals and a disordered phase. Using a −50 V substrate bias, a high degree of h‐BN crystallinity and film homogeneity over large areas on the Ni substrate was achieved.

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p -type conduction in beryllium-implanted hexagonal boron nitride films

Cited by 43 publications

References 26 publications

Band-edge transitions in hexagonal boron nitride epilayers

Band-edge transitions in hexagonal boron nitride epilayers

Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

Enhanced Crystallinity of h‐BN Films Induced by Substrate Bias During Magnetron Sputtering

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