P-type GaN powders obtained by nitridation of Ga-Mg liquid metallic solution

Gastellóu, Erick; Morales, C.; Garcı́a, R.; García, Gregorio Gómez-Jarabo; Hirata, G. A.; Herrera, Ana M.; Galeazzi, R.; Rosendo, E.; Díaz, T.; Tejeda, M.

doi:10.1016/j.jallcom.2018.09.174

Cited by 6 publications

(12 citation statements)

References 32 publications

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“…This work presents the effects of doping with Mg or Zn in the structural, and the luminescent properties of GaN films, which were grown via radio-frequency magnetron sputtering, using laboratory-prepared targets with Mg-doped or Zn-doped GaN powders. These powders were reported by our research team in previous works [16,17,19]. The obtained films might be applied as buffer layers in III-Nitride biosensors, pacemakers, and micro-electromechanical systems (MEMS).…”

Section: Introductionmentioning

confidence: 65%

“…The laboratory-prepared targets were elaborated using Mg-doped or Zn-doped GaN powders, whose synthesis processes were reported by our research group in previous works (Gastellóu et al [16,17,19]). A brief description of the process used to obtain Mg-or Zn-doped GaN powders is provided.…”

Section: Materials Synthesis For the Laboratory-prepared Targetsmentioning

confidence: 99%

“…Additionally, silicon (100) substrates were used to remove organic residues, along with the conventional cleaning of solvents and solutions. A diagram of this process of obtaining the Mg-or Zn-doped GaN films is shown in Figure 1a, while Figure 1b shows the targets prepared using Mg-doped, or Zn-doped GaN powders (Gastellóu et al [17,19]).…”

Section: Mg-or Zn-doped Gan Filmsmentioning

confidence: 99%

“…However, this technique might require the availability of GaN powders with high purity and a single-phase for use as a raw material in the targets' production. Additionally, GaN powders can be doped with Mg or Zn during the synthesis process [16][17][18][19][20][21]. This work presents the effects of doping with Mg or Zn in the structural, and the luminescent properties of GaN films, which were grown via radio-frequency magnetron sputtering, using laboratory-prepared targets with Mg-doped or Zn-doped GaN powders.…”

Section: Introductionmentioning

confidence: 99%

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Effects in the Optical and Structural Properties Caused by Mg or Zn Doping of GaN Films Grown via Radio-Frequency Magnetron Sputtering Using Laboratory-Prepared Targets

Gastellóu

García

Herrera³

et al. 2021

Applied Sciences

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GaN films doped with Mg or Zn were obtained via radio-frequency magnetron sputtering on silicon substrates at room temperature and used laboratory-prepared targets with Mg-doped or Zn-doped GaN powders. X-ray diffraction patterns showed broadening peaks, which could have been related to the appearance of nano-crystallites with an average of 7 nm. Scanning electron microscopy and transmission electron microscopy showed good adherence to silicon non-native substrate, as well as homogeneity, with a grain size average of 0.14 µm, and 0.16 µm for the GaN films doped with Zn or Mg, respectively. X-ray photo-electron spectroscopy demonstrated the presence of a very small amount of magnesium (2.10 mol%), and zinc (1.15 mol%) with binding energies of 1303.18, and 1024.76 eV, respectively. Photoluminescence spectrum for the Zn-doped GaN films had an emission range from 2.89 to 3.0 eV (429.23–413.50 nm), while Mg-doped GaN films had an energy emission in a blue-violet band with a range from 2.80 to 3.16 eV (443.03–392.56 nm). Raman spectra showed the classical vibration modes A1(TO), E1(TO), and E2(High) for the hexagonal structure of GaN.

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Section: Introductionmentioning

confidence: 65%

Section: Materials Synthesis For the Laboratory-prepared Targetsmentioning

confidence: 99%

Section: Mg-or Zn-doped Gan Filmsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effects in the Optical and Structural Properties Caused by Mg or Zn Doping of GaN Films Grown via Radio-Frequency Magnetron Sputtering Using Laboratory-Prepared Targets

Gastellóu

García

Herrera³

et al. 2021

Applied Sciences

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“…In nineties the blue laser of solid state obtained by Nakamura, Akasaki and Amano [1], [2], opened the wide way of the III-Nitrides semiconductor materials. This because to its application in the conservation of electrical energy through the replacement of incandescent light bulbs with LED technology bulbs [3]. Other important applications of the III-Nitrides are found in solar cells, LED screen, high electron mobility transistors (HEMTs), microwave devices and laser diodes [4]- [7].…”

Section: Introductionmentioning

confidence: 99%

Hexagonal Nanocrystals into AlGaN Powders Obtained via Pyrolysis from an Organometallic Compound

Herrera¹,

García²,

Gastellóu³

et al. 2019

EJERS

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Hexagonal nanocrystals into Al0.2Ga0.8N and Al0.6Ga0.4N powders via pyrolysis from an organometallic compound, followed by a nitridation process in ammonia flow at 1000 °C for two hours were obtained. X-ray diffraction patterns demonstrated a shift towards greater angles to the right for the AlGaN powders with respect to GaN powders, this shift could indicate the formation of the AlGaN powders. Scanning electron microscopy micrographs showed the obtaining from semi-plates of porous appearance for the Al0.2Ga0.8N powders until well-defined plates for the Al0.6Ga0.4N powders. High resolution transmission electron microscopy micrographs demonstrated the presence of hexagonal nanocrystals into Al0.2Ga0.8N powders with an average crystal size of 10.3 nm, while that for the Al0.6Ga0.4N powders an average crystal size of 9.7 nm was observed. UV-visible spectra showed a transmittance cut-off for the Al0.2Ga0.8N powders of 3.71 eV (334.2 nm) and a transmittance cut-off of 4.53 eV (273.7 nm) for the Al0.6Ga0.4N powders.

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Zinc doping of Ga-rich GaN powders obtained by nitridation of the Ga-Zn liquid metallic solution

Gastellóu

Morales

García

et al. 2019

Journal of Alloys and Compounds

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P-type GaN powders obtained by nitridation of Ga-Mg liquid metallic solution

Cited by 6 publications

References 32 publications

Effects in the Optical and Structural Properties Caused by Mg or Zn Doping of GaN Films Grown via Radio-Frequency Magnetron Sputtering Using Laboratory-Prepared Targets

Effects in the Optical and Structural Properties Caused by Mg or Zn Doping of GaN Films Grown via Radio-Frequency Magnetron Sputtering Using Laboratory-Prepared Targets

Hexagonal Nanocrystals into AlGaN Powders Obtained via Pyrolysis from an Organometallic Compound

Zinc doping of Ga-rich GaN powders obtained by nitridation of the Ga-Zn liquid metallic solution

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