p‐Type MoS<sub>2</sub> and n‐Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect

Xue, Fei; Chen, Libo; Chen, Jian; Liu, Jingbin; Wang, Long; Chen, Mengxiao; Pang, Yaokun; Yang, Xubo; Gao, Guoyun; Zhai, Junyi; Wang, Zhong Lin

doi:10.1002/adma.201506472

Cited by 156 publications

(136 citation statements)

References 41 publications

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“…As a consequence, the devices exhibit a maximum responsivity as high as 2.3 × 10 4 A W −1 under −0.38% compressive strain, which represents a 26‐fold improvement over the highest value for previously reported single‐layer MoS 2 ‐based photodetectors. Piezo‐phototronic effect has also been employed to enhance the photoresponse of devices based on 2D MoS 2 flake/ZnO film and MoS 2 flake/CuO film vertical heterojunctions, as well as MoS 2 /rGO heterostructures . Upon external mechanical strain, the maximum responsivities of these devices can be enhanced by several to tens of times, which is attributed to the adjusted band structure at the heterojunction interface as well as the broadened depletion region induced by the piezo‐potential.…”

Section: D Layered Materials‐based Flexible Photodetectorsmentioning

confidence: 99%

Flexible Photodetectors Based on Novel Functional Materials

Xie

Yan

2017

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Flexible photodetectors have attracted a great deal of research interest in recent years due to their great possibilities for application in a variety of emerging areas such as flexible, stretchable, implantable, portable, wearable and printed electronics and optoelectronics. Novel functional materials, including materials with zero-dimensional (0D) and one-dimensional (1D) inorganic nanostructures, two-dimensional (2D) layered materials, organic semiconductors and perovskite materials, exhibit appealing electrical and optoelectrical properties, as well as outstanding mechanical flexibility, and have been widely studied as building blocks in cost-effective flexible photodetection. Here, we comprehensively review the outstanding performance of flexible photodetectors made from these novel functional materials reported in recent years. The photoresponse characteristics and flexibility of the devices will be discussed systematically. Summaries and challenges are provided to guide future directions of this vital research field.

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Section: D Layered Materials‐based Flexible Photodetectorsmentioning

confidence: 99%

Flexible Photodetectors Based on Novel Functional Materials

Xie

Yan

2017

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“…The absence of high quality p–n junctions also limits the performance of the MoS 2 based devices. Although photodetectors based on mono/multilayer MoS 2 heterostructure have shown excellent device characteristics in terms of high sensitivity (up to 7 A/W) and wide band response26272829 their applicability still suffers due to complex fabrication process.…”

mentioning

confidence: 99%

High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

Dhyani

Das

2017

Sci Rep

137

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Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS2 p-n heterojunction photodetector with simple and CMOS compatible approach has been reported here. The large area MoS2 thin film on silicon platform has been synthesized by sulfurization of RF-sputtered MoO3 films. The fabricated molecular layers of MoS2 on silicon offers high responsivity up to 8.75 A/W (at 580 nm and 3 V bias) with ultra-fast response of 10 μsec (rise time). Transient measurements of Si/MoS2 heterojunction under the modulated light reveal that the devices can function up to 50 kHz. The Si/MoS2 heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ≈1.4 × 1012 Jones (2 V bias). Reproducible low dark current and high responsivity from over 20 devices in the same wafer has been measured. Additionally, the MoS2/Si photodetectors exhibit excellent stability in ambient atmosphere.

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“…Xue et al fabricated a p-MoS 2 and an n-ZnO diode and measured its photoresponse performance under different pressures [55]. MoS 2 is pretreated by SF 6 to become p-type and acrylic is used to apply a pressure and simultaneously transmit the ultraviolet.…”

Section: D Semiconductors/conventional Piezoelectric Oxide Heterostrmentioning

confidence: 99%

Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

2017

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Two-dimensional semiconductors, such as transition-metal dichalcogenides (TMDs) and black phosphorous (BP), have found various potential applications in electronic and opto-electronic devices. However, several problems including low carrier mobility and low photoluminescence efficiencies still limit the performance of these devices. Interfacing 2D semiconductors with functional oxides provides a way to address the problems by overcoming the intrinsic limitations of 2D semiconductors and offering them multiple functionalities with various mechanisms. In this review, we first focus on the physical effects of various types of functional oxides on 2D semiconductors, mostly on MoS 2 and BP as they are the intensively studied 2D semiconductors. Insulating, semiconducting, conventional piezoelectric, strongly correlated, and magnetic oxides are discussed. Then we introduce the applications of these 2D semiconductors/functional oxides systems in field-effect devices, nonvolatile memory, and photosensing. Finally, we discuss the perspectives and challenges within this research field. Our review provides a comprehensive understanding of 2D semiconductors/functional oxide heterostructures, and could inspire novel ideas in interface engineering to improve the performance of 2D semiconductor devices.

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p‐Type MoS₂ and n‐Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect

Cited by 156 publications

References 41 publications

Flexible Photodetectors Based on Novel Functional Materials

Flexible Photodetectors Based on Novel Functional Materials

High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

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p‐Type MoS2 and n‐Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect

Cited by 156 publications

References 41 publications

Flexible Photodetectors Based on Novel Functional Materials

Flexible Photodetectors Based on Novel Functional Materials

High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

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Product

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p‐Type MoS₂ and n‐Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect