p-Type transparent thin films of CuY1−xCaxO2

Jayaraj, M. K.; Draeseke, A. D.; Tate, Janet; Sleight, A.W.

doi:10.1016/s0040-6090(01)01362-1

Cited by 130 publications

(75 citation statements)

References 16 publications

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“…However, the literature data are somewhat conflicting in terms of the effects of oxygen pressure, as in some reports the films prepared in an oxygendeficient atmosphere show high electrical conductivity but low transmittance and in some cases just the opposite has been observed. [8,20,[41][42][43][44][45]50] Nevertheless, it is widely believed that the presence of interstitial oxygen in Cu(Cr,Mg)O 2 thin films could improve the electrical conductivity due to hole doping. [5,10,43,44] This could be true in our case as well, as in our ALD deposition process ozone gas as a source for oxygen is pulsed into the reactor in every ALD cycle.…”

Section: Wileyonlinelibrarycommentioning

confidence: 99%

Enhanced p‐Type Transparent Semiconducting Characteristics for ALD‐Grown Mg‐Substituted CuCrO₂ Thin Films

Tripathi

Karppinen

2016

Adv Elect Materials

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Magnesium‐substituted CuCrO2 delafossite is a promising candidate for p‐type transparent conducting oxide applications owing to its relatively high electrical conductivity and optical transparency in the visible range. Here, the atomic layer deposition fabrication of semiconducting Cu(Cr1−xMgx)O2 (up to x = 0.043) thin films based on Cu(thd)2 (thd = 2,2,6,6‐tetramethyl‐3,5‐heptanedionate), Cr(acac)3 (acac = acetyl acetonate), and Mg(thd)2 as metal precursors and ozone as the oxygen source is reported. Smooth and homogeneous thin films with an accurately controlled Mg content are obtained at the deposition temperature of 250 °C. A limited substitution level is revealed from X‐diffraction patterns: peaks due to the spinel‐structured MgCr2O4 secondary phase appear for x ≥ 0.015 while the increase in lattice parameters of the delafossite Cu(Cr,Mg)O2 phase continues even up to x ≈ 0.03. The direct bandgap as determined from UV–vis spectrophotometric measurements is observed to decrease from 3.09 eV for x = 0 to 2.87 eV for x = 0.015 before increasing to 3.15 eV for x = 0.043. The observed transmittance is close to 80% in the visible range. These characteristics are superior to the thin films of the copper delafossite family prepared by any thin‐film technique.

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Section: Wileyonlinelibrarycommentioning

confidence: 99%

Enhanced p‐Type Transparent Semiconducting Characteristics for ALD‐Grown Mg‐Substituted CuCrO₂ Thin Films

Tripathi

Karppinen

2016

Adv Elect Materials

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“…Several CuMO 2 thin films have been reported with different conductivities and transparencies [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Ac conductivity and dielectric properties of CuFe_1−xCr_xO₂ : Mg delafossite

Lalanne¹,

Demont²,

Barnabé³

2011

J. Phys. D: Appl. Phys.

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To cite this version:M Lalanne, P Demont, A Barnabé. Ac conductivity and dielectric properties of CuFe1xCrxO2:Mg delafossite. Journal of Physics D: Applied Physics, IOP Publishing, 2011, 44 (18) AbstractThe electrical and dielectric properties of CuFe 1-x Cr x O 2 (0 x 1) powders, doped with 3 % of Mg and prepared by solid-sate reaction, were studied by broadband dielectric spectroscopy in the temperature range from -100 to 150°C. The frequency-dependent electrical and dielectric data have been discussed in the framework of a power law conductivity and complex impedance and dielectric modulus. At room temperature, the ac conductivity behaviour is characteristic of the charge transport

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“…Fabricated from both n-and p-types of transparent conducting oxides (TCO), these devices can act as "UV-shields" as well as "electricity generators" by UV absorption. Ever since Kawazoe and co-authors [2] reported the synthesis of transparent p-type semiconducting delafossite copper aluminium oxide (CuAlO 2 ) thin films, various groups around the globe reported the fabrication of p-i-n as well as p-n homojunction and heterojunction transparent diodes with considerably good electro-optical properties for potential applications in "Invisible" or "Transparent Electronics" [3][4][5][6][7][8][9][10][11][12]. As far as the fabrication procedures of these transparent diodes are concerned, most of the groups used physical routes such as pulsed laser deposition (PLD) [4,7,11,12], reactive evaporation, magnetron sputtering, thermal coevaporation, radio frequency (r.f.)…”

Section: Introductionmentioning

confidence: 99%

“…As far as the fabrication procedures of these transparent diodes are concerned, most of the groups used physical routes such as pulsed laser deposition (PLD) [4,7,11,12], reactive evaporation, magnetron sputtering, thermal coevaporation, radio frequency (r.f.) magnetron sputtering, reactive sputtering [5,9,13,14], laser doping [15] etc. Additionally, most of these diode structures consist of het-erojunctions like strontium copper oxide/zinc oxide (ZnO) [4,7], copper yttrium oxide/ZnO [9,10], CuAlO 2 /ZnO [11] etc.…”

Section: Introductionmentioning

confidence: 99%

“…magnetron sputtering, reactive sputtering [5,9,13,14], laser doping [15] etc. Additionally, most of these diode structures consist of het-erojunctions like strontium copper oxide/zinc oxide (ZnO) [4,7], copper yttrium oxide/ZnO [9,10], CuAlO 2 /ZnO [11] etc. as well as homojunctions such as p-CuInO 2 : Ca/nCuInO 2 : Sn [12], p-ZnO: P/n-ZnO [15], p-ZnO: As/n-ZnO [13] etc.…”

Section: Introductionmentioning

confidence: 99%

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Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

Banerjee¹,

Chattopadhyay²

2008

Open Physics

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We report on the fabrication of all transparent heterojunction thin film diodes of the form glass/n-ZnO: Al/p-CuAlO2 produced by a combinatorial chemical and physical technique and on a study of their electro-optical properties. The n-ZnO: Al layer was deposited by a sol-gel-dip-coating process whereas the p-CuAlO2 layer was deposited by direct current sputtering techniques. The diode structure, with a total thickness of 1100 nm showed around 60% transmittance in the visible region. The current-voltage characteristics of the device showed a rectifying nature, with a low turn-on voltage around 0.8 V, having a rectification ratio > 50 at ± 2 V. The low turn-on voltage and moderate visible transmittance of the transparent diode indicate its potential application in the field of “Transparent” or “Invisible Electronics”.

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p-Type transparent thin films of CuY1−xCaxO2

Cited by 130 publications

References 16 publications

Enhanced p‐Type Transparent Semiconducting Characteristics for ALD‐Grown Mg‐Substituted CuCrO₂ Thin Films

Enhanced p‐Type Transparent Semiconducting Characteristics for ALD‐Grown Mg‐Substituted CuCrO₂ Thin Films

Ac conductivity and dielectric properties of CuFe_1−xCr_xO₂ : Mg delafossite

Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

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p-Type transparent thin films of CuY1−xCaxO2

Cited by 130 publications

References 16 publications

Enhanced p‐Type Transparent Semiconducting Characteristics for ALD‐Grown Mg‐Substituted CuCrO2 Thin Films

Enhanced p‐Type Transparent Semiconducting Characteristics for ALD‐Grown Mg‐Substituted CuCrO2 Thin Films

Ac conductivity and dielectric properties of CuFe1−xCrxO2 : Mg delafossite

Electro-optical properties of all-oxide p-CuAlO2/n-ZnO: Al transparent heterojunction thin film diode fabricated on glass substrate

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Product

Resources

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Enhanced p‐Type Transparent Semiconducting Characteristics for ALD‐Grown Mg‐Substituted CuCrO₂ Thin Films

Enhanced p‐Type Transparent Semiconducting Characteristics for ALD‐Grown Mg‐Substituted CuCrO₂ Thin Films

Ac conductivity and dielectric properties of CuFe_1−xCr_xO₂ : Mg delafossite