p-Type Ultrawide-Band-Gap Spinel ZnGa₂O₄: New Perspectives for Energy Electronics

Abstract

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Zinc Gallium Oxide—A Review from Synthesis to Applications

“…Recently, Chikoidze et al [7] demonstrated that spinel ZnGa 2 O 4 is the native p-type ternary oxide semiconductor with the widest bandgap. Their work has extended to cover the bipolar mechanisms in optoelectronics and power electronics.…”

“…This wide-bandgap material is attracting significant attention due to the possibility of its use not only in high-powered devices, but also in UV-transparent devices-especially for applications in conjunction with biological samples-because absorption peaks in deoxyribonucleic acid (DNA) lie in the UV spectrum [6]. Recently, Chikoidze et al demonstrated the p-type ZnGa 2 O 4 semiconductor (∼5 eV), which can pave the way for bipolar oxide energy electronics (it can save the loss from switching and conversion of electrical energy), as they would join the required qualities of sustaining large electrical fields in p-n junctions in the off-state together with low losses in the on-state [7]. Besides this, wide-bandgap semiconductors enhance the efficiency of power-conversion stages and these are an alternative for silicon in the manufacturing of voltage converters, power MOSFETs, and high-efficiency Schottky diodes, which can be further used in electric vehicles and hybrid electric vehicles.…”

Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3

“…Agnitron Technology Incorporated (USA) reported β-Ga2O3 Zn doped thin films on c-sapphire by MOCVD the incorporation of 10.9% Zn XRD patterns yielded to a mono-phase polycrystalline structure with increase of lattice parameters with doping, though room temperature Hall measurements were not successful due to very high resistivity of the samples [27]. Recently, we have shown that incorporation of Zn in p-type β-Ga2O3 with more than 5% leads the transformation of orthorhombic structure into spinel ZnGa2O4 with an increased band gap (~0.2 eV) and p-type carrier densities (×10-100 cm -3 ) [28]. Very few experimental works are reported about low doping cases, when incorporated Zn amount is less than 1%.…”

Quantum mechanical modeling of Zn‐based spinel oxides: Assessing the structural, vibrational, and electronic properties

“…[106][107][108] Furthermore, wide band-gap materials can be applied as UV optoelectronics and UV-transparent devices, emerging as a potential candidate for applications in different fields. [109,110]…”