p -type Zn1−xMgxO films with Sb doping by radio-frequency magnetron sputtering

Abstract

Sb-doped Zn 1−x Mg x O films were grown on c-plane sapphire substrates by radio-frequency magnetron sputtering. The p-type conduction of the films ͑0.05ഛ x ഛ 0.13͒ was confirmed by Hall measurements, revealing a hole concentration of 10 15 -10 16 cm −3 and a mobility of 0.6-4.5 cm 2 /V s. A p-n homojunction comprising an undoped ZnO layer and an Sb-doped Zn 0.95 Mg 0.05 O layer shows a typical rectifying characteristic. Sb-doped p-type Zn 1−x Mg x O films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of ZnO-based quantum wells and ultraviolet optoelectronic devices.

As-doped p-type ZnO films grown on SiO2/Si by radio frequency magnetron sputtering

“…Obviously, the nonlinear behavior is due to ZnO homojunction. During I-V measurement at room temperature, no light emission was detected due to the nonradiative recombination in the interface of the junction and the low mobility of p-type ZnO film [16][17][18][19].…”

Effects of crystalline quality on the ultraviolet emission and electrical properties of the ZnO films deposited by magnetron sputtering

“…For device application, the growth of high quality ZnO with a high crystalline ordering and a high mobility of carriers as well as an efficient ultraviolet (UV) emission is a key factor to assure the high performance of device. In the past, high optical quality ZnO films were generally produced by depositing on low mismatch substrates or low temperature homogenous buffer layers using various growth methods [4][5][6][7][8][9][10][11][12]. However, high quality single crystal ZnO films have been mainly achieved on sapphire in sophisticated and finely controlled thin film growth techniques such as molecular beam epitaxy (MBE) [4,5] and molecular organic chemical vapor deposition (MOCVD) [6,7].…”

Crystallization effect of Al–Ag alloying layer in PL enhancement of ZnO thin film

“…When ZnO is compared with other wide bandgap materials, such as GaN (28 meV), ZnO possesses a high exciton binding energy (60 meV). Owing to the photoluminescence (PL) spectrum [1,2], ZnO films have great potential for the various applications in optoelectronic devices and related ultraviolet(UV) devices. Notably, the optical quality of ZnO film with strong UV emission is important for use in ZnO-based devices.…”