P3S nanoribbons with bi-directional superior spin thermoelectric properties

He, Jing-Jing; Dong, Jia-Bei; Zhang, Ying; Cao, Qin-Yue; Liu, Ling-Xiao; Gu, Jun-Yi; Hua, Min; Yuan, Jia-Ren; Yan, Xiao-Hong

doi:10.1016/j.physe.2024.116116

Physica E: Low-dimensional Systems and Nanostructures

2025

DOI: 10.1016/j.physe.2024.116116

|View full text |Cite

P3S nanoribbons with bi-directional superior spin thermoelectric properties

Jing-Jing He,

Jia-Bei Dong,

Ying Zhang

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance

Zheng,

Yang,

Zheng

et al. 2024

Applied Physics Letters

View full text Add to dashboard Cite

Tunnel magnetoresistance (TMR) ratio is a key parameter characterizing the performance of a magnetic tunnel junction (MTJ), and a large TMR ratio is essential for the practical application of it. Generally, the traditional solutions to increasing the TMR ratio are to choose different material combinations as the ferromagnetic (FM) leads and nonmagnetic tunnel barrier. In this work, we study an architecture of MTJs of “FM/barrier/FM/barrier/FM” with double barriers, in contrast to the traditional single barrier structure “FM/barrier/FM.” We first analytically show that double barrier MTJ will generally have much higher TMR ratio than the single barrier MTJ and then substantiate it with the well-known example of “Fe/MgO/Fe” MTJ. Based on density functional calculations combined with nonequilibrium Green's function technique for quantum transport study, in the single barrier “Fe/MgO/Fe” MTJ, the TMR ratio is obtained as 122%, while in the double barrier “Fe/MgO/Fe/MgO/Fe” MTJ, it is greatly increased to 802%, suggesting that double barrier design can greatly enhance the TMR and can be taken into consideration in the design of MTJs.

show abstract

Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance

Zheng,

Yang,

Zheng

et al. 2024

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

Giant tunneling magnetoresistance and electroresistance in a two-dimensional VSi2N4 / In2Te3
Yang,
Zheng,
Hao
et al. 2024
Phys. Rev. B
0
0
0
0
View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

P3S nanoribbons with bi-directional superior spin thermoelectric properties

Cited by 2 publications

References 45 publications

Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance

Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance

Giant tunneling magnetoresistance and electroresistance in a two-dimensional VSi2N4 / In2Te3
Yang,
Zheng,
Hao
et al. 2024
Phys. Rev. B
0
0
0
0
View full text Add to dashboard Cite

Contact Info

Product

Resources

About

P3S nanoribbons with bi-directional superior spin thermoelectric properties

Cited by 2 publications

References 45 publications

Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance

Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance

Giant tunneling magnetoresistance and electroresistance in a two-dimensional VSi2N4 / In2Te3Yang, Zheng, Hao et al. 2024Phys. Rev. B0000View full textAdd to dashboardCite

Contact Info

Product

Resources

About

Giant tunneling magnetoresistance and electroresistance in a two-dimensional VSi2N4 / In2Te3
Yang,
Zheng,
Hao
et al. 2024
Phys. Rev. B
0
0
0
0
View full text Add to dashboard Cite