PAG segregation during exposure affecting innate material roughness

Fedynyshyn, Theodore H.; Astolfi, David K.; Cabral, Alberto; Roberts, J. M.

doi:10.1117/12.713892

Cited by 20 publications

(11 citation statements)

References 21 publications

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“…15 Some work called into question the exclusive dependence on shot noise as both a limiter and significant determinant of LWR. It was found that no simple relationship exists between IMR and sensitivity and instead some other, more complex relationship between the material properties of the polymer and resist process that is determining both the IMR and sensitivity.…”

Section: Introductionmentioning

confidence: 99%

PAG segregation during exposure affecting innate material roughness

Fedynyshyn

Astolfi

Cabral

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

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We have developed an improved AFM-based technique to measure intrinsic material roughness (IMR) after base development. We have investigated the contribution of different polymeric PAGs to IMR. These polymeric PAGs include copolymers of several styrenic PAGs with hydroxystyrene. The IMR of these polymer-bound PAGs is reduced relative to that of their nonpolymeric counterparts with DUV exposure. Theses results represent further evidence for PAG segregation during the bake steps as being responsible for increased IMR in exposed resists, presumably by increasing the dissolution rate inhomogeneity on a nano-scale level. The work also shows that the effects of PAG segregation can be mitigated by employing polymer-bound PAGs.

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Section: Introductionmentioning

confidence: 99%

PAG segregation during exposure affecting innate material roughness

Fedynyshyn

Astolfi

Cabral

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

Self Cite

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“…There have been several recent studies that have investigated the effects of PAGs that segregate to the top of a resist film 16,17,18 . Again as a means of validating the mesoscale model, a PAG concentration profile in which the PAG segregates to the top of the film was programmed into the simulator.…”

Section: Pag Segregation Impact On Resist Profilementioning

confidence: 99%

Extension of 248 nm Monte Carlo, mesoscale models to 193 nm platforms

et al. 2010

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Current minimum feature sizes in the microelectronics industry dictate that molecular interactions affect process fidelity and produce stochastic excursions like line edge roughness (LER). The composition of future resists is still unknown at this point, and so simulation of various resist platforms should provide useful information about resist design that minimizes LER. In the past, researchers developed a mesoscale model 1, 2 for exploring representative 248 nm resist systems through dynamic Monte Carlo methods and adaptation of critical ionization theory 3 . This molecular modeling uses fundamental interaction energies combined with a Metropolis algorithm to model the full lithographic process (spin coat, PAB, exposure, PEB, and development). Application of this model to 193 nm platforms allows for comparison between 248 and 193 nm resist systems based on molecular interactions. This paper discusses the fundamental modifications involved in adapting the mesoscale model to a 193 nm platform and investigates how this new model predicts well-understood lithographic phenomena including the relationship between LER and aerial image, the relationship between LER and resist components, and the impact of non-uniform PAG distribution in the resist film. Limited comparisons between the 193 nm system and an analogous 248 nm platform will be discussed.

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“…The surface energy affects at the substrate-resist and resist-air interfaces can induce PAG segregation that will be attracted to or away from interfaces. The segregation of PAG can lead to non-homogenous optical absorption, photo-speed and acid diffusion effects throughout the film 17 . Furthermore, the intermixing of resist and organic BARC species can also reduce the amount of PAG or acid that is available at the bottom of the resist film.…”

Section: Line Width Roughness (Lwr)mentioning

confidence: 99%

Resist fundamentals for resolution, LER, and sensitivity (RLS) performance tradeoffs and their relation to micro-bridging defects

Rathsack

Nafus

Hatakeyama

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

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High NA immersion and EUV lithography processes are challenged to meet stringent control requirements for the 22 nm node and beyond. Lithography processes must balance resolution, LWR and sensitivity (RLS) performance tradeoffs while scaling resist thickness to 100 nm and below 1-3 . Hardware modules including coat, bake and development seek to enable resist processes to balance RLS limitations. The focus of this paper is to study the fundamentals of the RLS performance tradeoffs through a combination of calibrated resist simulations and experiments.This work seeks to extend the RLS learning through the creation of calibrated resist models that capture the exposure kinetics, acid diffusion properties, deprotection kinetics and dissolution response as a function of PAG loading in a 193 nm polymer system. The calibrated resist models are used to quantify the resolution and sensitivity performance tradeoffs as well as the degradation of resist contrast relative to image contrast at small dimensions.Calibrated resist simulations are capable of quantifying resolution and sensitivity tradeoffs, but lack the ability to model LWR. LWR is challenging to simulate (lattice models) and to measure; due to the dependence on spectral frequency. This paper seeks to use micro-bridging experiments as means to better understand the statistical nature of LWR. Microbridging analysis produces a statistical distribution of "discrete bridging events" that encompasses practical variations across scanner, track and resist. Micro-bridging and LWR experiments are done using a 1.2 NA immersion system on 45 nm space structures (90 nm pitch) as a means to demonstrate the concept, but the methodology can also be used to study EUVL processes as the technology matures. The understanding of the RLS performance tradeoffs enables TEL to develop future hardware and processes that support industry scaling goals.

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PAG segregation during exposure affecting innate material roughness

Cited by 20 publications

References 21 publications

PAG segregation during exposure affecting innate material roughness

PAG segregation during exposure affecting innate material roughness

Extension of 248 nm Monte Carlo, mesoscale models to 193 nm platforms

Resist fundamentals for resolution, LER, and sensitivity (RLS) performance tradeoffs and their relation to micro-bridging defects

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