Pair-breaking current of inhomogeneous superconducting films

Alexandrov, A. S.

doi:10.1016/0038-1098(80)90235-5

Solid State Communications

1980

DOI: 10.1016/0038-1098(80)90235-5

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Pair-breaking current of inhomogeneous superconducting films

A. S. Alexandrov¹

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1990

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New Doping Technique for Getting Highly Conductive p-Type Hydrogenated Amorphous Si and Sic Alloys

Takeuchi

Nomoto²,

Ganguly

et al. 1990

MRS Proc.

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Highly conductive B-doped hydrogenated amorphous Si (a-Si:H) as well as amorphous SiC alloys (a-SiC:H) have been prepared from (SiH4)/(B2H6/SiH4) and (SiH4/CH4)/(B2H6/SiH4) plasmas, respectively by a novel surface-temperature-modulation method. Films produced by this technique exhibit a higher conductivity as compared to the conventionally prepared films, i.e., 7.0xl0-3Scm-1 for p-type a-Si:H with an optical gap of 1.7eV and 5.5xl0-5Scm-1 for p-type a-SiC:H of optical gap 1.9ev.

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New Doping Technique for Getting Highly Conductive p-Type Hydrogenated Amorphous Si and Sic Alloys

Takeuchi

Nomoto²,

Ganguly

et al. 1990

MRS Proc.

View full text Add to dashboard Cite

show abstract

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Pair-breaking current of inhomogeneous superconducting films

Cited by 1 publication

References 11 publications

New Doping Technique for Getting Highly Conductive p-Type Hydrogenated Amorphous Si and Sic Alloys

New Doping Technique for Getting Highly Conductive p-Type Hydrogenated Amorphous Si and Sic Alloys

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