Palladium seeding on the tantalum-insulated silicon oxide film by plasma immersion ion implantation for the growth of electroless Copper

Lin, J. H.; Tsai, Yu‐Zen; Chiu, Shao-Yu; Lee, T. L.; Tsai, Chia-Lung; Chen, P. H.; Lin, Chien-Cheng; Feng, M. S.; Kou, C. S.; Shih, Han C.

doi:10.1016/s0040-6090(00)01443-7

Cited by 14 publications

(5 citation statements)

References 17 publications

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“…Technologies for copper deposition of thin films having good quality include chemical vapor deposition, which requires careful reduction of copper precursors using hydrogen, and electroless plating. The electroless plating benefits from its lower tool cost and lower-temperature operation than other methods [2][3][4][5], but it is necessary to activate the specimen surface in a solution of PdCl 2 and SnCl 2 [6][7][8]. Additionally, if a trace amount of chloride ions remain on the Cu interconnects, corrosion reactions would occur [9,10].…”

Section: Introductionmentioning

confidence: 99%

Conductive and semi-transparent Cu thin film fabricated using molecular precursor solutions

et al. 2015

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Section: Introductionmentioning

confidence: 99%

Conductive and semi-transparent Cu thin film fabricated using molecular precursor solutions

et al. 2015

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“…They suggested that Pd ion implantation can activate the samples and catalyse electroless nickel plating and leads to a successful metallisation. Lin et al 5 implanted Pd onto a Ta diffusion barrier layer as catalyst for the electroless Cu plating in order to accomplish the Ultra-Large Scale Integration (ULSI) interconnection metallisation by plasma immersion ion implantation and electroless plating at the same time. A silicon substrate is etched after gold ions (3?1 MeV) are implanted by an ion implantation and surface etching method, which was developed by Nakano et al, 6 resulting in activated gold particles adhering good to the support.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, PTFE and its derivates need activation to form an activated surface layer, which induces the reaction of electroless plating. 2 In the late 1990s, it was reported that electroless copper plating could be induced on non-metals by implanting Pd ions to their surface, [3][4][5] which was mainly focused on the metallisation of monocrystalline silicon. In 1995, Bhansali and Sood 3,4 first implanted Pd ions into monocrystalline silicon and polyimide, followed by electroless nickel plating.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and friction performance of copper film fabricated by ion implantation assisted electroless plating on PTFE

Sui

Sun

Wang

et al. 2011

Materials Science and Technology

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The polytetrafluoroethylene (PTFE), which was implanted with Ni ion to different energy and doses, fabricated metallic structures by selective electroless copper plating. The characteristic and microstructure of the copper film were studied using SEM and X-ray diffraction. Friction performance of the interface between copper film and basal body of PTFE was tested with a CETR UMT-2 (CETR Co., Campbell, CA, USA) multifunction micromechanics instrument. The test loads were 10, 20 and 40 N, while the line velocity was 8 mm s 21 , and the frequency of data acquisition was 1 Hz. The Ni ion implantation replaces the complicated electroless plating surface pretreatment, and it is an assisted technique of electroless plating of copper on the surface of PTFE and plate Cu directly on its surface. Continuous, prepressing and uniformity plating was obtained with proper technique parameters and the dosage of Ni z . The frictional performance comprehensive property of copper film was remarkably influenced by different plating methods, annealing treatment and testing loads under unlubricated condition. The friction coefficients and wear rates changed with the varied load. Annealing treatment improves the tightness and uniformity of the copper film, while it decreases its cavity. Friction performance of copper film was thus increased. The mechanisms of friction and wear of copper film under different test conditions are also discussed.

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“…Thus, subjecting the silicon substrate surface to an effective pretreatment prior to the electroless metallization process is a necessary and essential step. The methods for the modification of silicon surfaces have included chemical etching, − plasma immersion ion implantation, − chemical vapor deposition, , dry seeding via sputtering, coupling of silane-based and self-assembled monolayers (SAMs), , plasma graft polymerization, etc. Earlier studies have also demonstrated that palladium chemisorption can be achieved directly on polymer surfaces modified by plasma-induced grafting of nitrogenated groups. , It has also been shown that self-assembled films of organosilanes containing ligand functional groups, such as phosphines, pyridines, or alkylamines, are useful for binding palladium catalysts to silicon surfaces and that the bound catalysts initiate electroless metal deposition. , 23…”

Section: Introductionmentioning

confidence: 99%

Selective Electroless Plating of Copper on (100)-Oriented Single Crystal Silicon Surface Modified by UV-Induced Coupling of 4-Vinylpyridine with the H-Terminated Silicon

Xu¹,

Kang²,

Neoh³

et al. 2002

J. Phys. Chem. B

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A Sn-free electroless plating process for producing patterned and adherent copper deposits on (100)-oriented single-crystal silicon substrates is described. Pristine and resist-patterned Si(100) substrates were etched, initially, by aqueous HF to produce the hydrogen-terminated silicon surfaces (H-Si(100) surfaces). The H-Si(100) surfaces were further functionalized by the UV-induced reactive coupling of 4-vinylpyridine (4VP). The composition and topography of the modified Si(100) surfaces were characterized by X-ray photoelectron spectroscopy and atomic force microscopy, respectively. The coupled 4VP layer exhibited good stability in boiling chloroform, boiling water, sonicating dichloromethane, aqueous solution of HF and aqueous solution of KOH. Not only did the 4VP layer provide chemisorption sites for the palladium complexes without the need for prior sensitization in SnCl 2 solution during the electroless plating process but it also served as the adhesion promotion layer and diffusion barrier for the electrolessly deposited copper. The 180°-peel adhesion strength of the electroless deposited copper on the modified silicon surface was dependent on the extent of 4VP surface coverage and could reach about 4 N/cm.

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Palladium seeding on the tantalum-insulated silicon oxide film by plasma immersion ion implantation for the growth of electroless Copper

Cited by 14 publications

References 17 publications

Conductive and semi-transparent Cu thin film fabricated using molecular precursor solutions

Conductive and semi-transparent Cu thin film fabricated using molecular precursor solutions

Microstructure and friction performance of copper film fabricated by ion implantation assisted electroless plating on PTFE

Selective Electroless Plating of Copper on (100)-Oriented Single Crystal Silicon Surface Modified by UV-Induced Coupling of 4-Vinylpyridine with the H-Terminated Silicon

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