Paper-Thin InGaP/ GaAs Solar Cells

Takamoto, Tatsuya; Kodama, Tomoya; Yamaguchi, Hiroshi; Agui, T.; Takahashi, Naoki; Washio, Hidetoshi; Hisamatsu, T.; Kaneiwa, M.; Okamoto, K.; Imaizumi, Mitsuru; Kibe, Koichi

doi:10.1109/wcpec.2006.279833

Cited by 31 publications

(21 citation statements)

References 3 publications

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“…Other devices can also benefit from these materials, such as heterojunction bipolar transistors, 1.3 and 1.55 m photodetectors and lasers, and InP-onGaAs and GaAs-on-Si devices in general. Many research studies have investigated the promise of metamorphic materials for solar cells, [3][4][5][6][7][8][9][10][11] often citing 40% conversion efficiency as a possible goal. This letter reports on three-junction metamorphic and lattice-matched cells that have now surpassed the 40% efficiency milestone.…”

Section: % Efficient Metamorphic Gainp/ Gainas/ Ge Multijunction Somentioning

confidence: 99%

40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

King¹,

Law²,

Edmondson³

et al. 2007

Applied Physics Letters

1,164

588

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An efficiency of 40.7% was measured and independently confirmed for a metamorphic three-junction GaInP∕GaInAs∕Ge cell under the standard spectrum for terrestrial concentrator solar cells at 240 suns (24.0W∕cm2, AM1.5D, low aerosol optical depth, 25°C). This is the initial demonstration of a solar cell with over 40% efficiency, and is the highest solar conversion efficiency yet achieved for any type of photovoltaic device. Lattice-matched concentrator cells have now reached 40.1% efficiency. Electron-hole recombination mechanisms are analyzed in metamorphic GaxIn1−xAs and GaxIn1−xP materials, and fundamental power losses are quantified to identify paths to still higher efficiencies.

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Section: % Efficient Metamorphic Gainp/ Gainas/ Ge Multijunction Somentioning

confidence: 99%

40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

King¹,

Law²,

Edmondson³

et al. 2007

Applied Physics Letters

1,164

588

View full text Add to dashboard Cite

show abstract

“…Specifically for the space use, very thin, light and flexible InGaP/GaAs 2J and InGaP/GaAs/Ge 3J cells are being developed recently [31][32][33]. Figure 8 shows a photograph of a flexible InGaP/GaAs 2J device [33].…”

Section: Developments Of Multijunction Iii-v Solar Cellsmentioning

confidence: 99%

“…Figure 8 shows a photograph of a flexible InGaP/GaAs 2J device [33]. Although the fabrication processes have not been well disclosed, the photovoltaic layers are attached to metal or polymer supporting films and the parent substrates for the epitaxial growth are removed somehow.…”

Section: Developments Of Multijunction Iii-v Solar Cellsmentioning

confidence: 99%

A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

Tanabe

2009

Energies

158

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Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and plasmonic metallic structures. Technological strategies for further performance improvement from the most efficient (Al)InGaP/(In)GaAs/Ge triple-junction cells including the search for 1.0 eV bandgap semiconductors are discussed. Lower-dimensional systems such as quantum well and dot structures are being intensively studied to realize multiple exciton generation and multiple photon absorption to break the conventional efficiency limit. Implementation of plasmonic metallic nanostructures manipulating photonic energy flow directions to enhance sunlight absorption in thin photovoltaic semiconductor materials is also emerging.

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“…The III-V group materials are widely used for tandem materials cells for the space application, in 2009 InGaP/GaAsdouble Junction and InGaP/GaAs/Getriple Junction cells were designed. Triple junction structure of GaInP/GaAs/Ge shown efficiency of 41.6% [8] but itshouldbenotedthatthe0.66eV indirect band gap energy of Geisnotoptimal band gapoflower sub cellofa triple junction cell. In recent times, in 2012 a latest structure of GaInp/GaAs/GaInNAs shows efficiency of 44%, which is the world highest [9].…”

Section: Introductionmentioning

confidence: 99%

Design of a Highly Efficient InGaN Single Junction Solar Cell Designed from Numerical Analysis

Akter¹

2018

IJRASET

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Though the expenditure of world energy is increasing exponentially, it is obvious that a solution of renewable energy must be utilized. In order to fulfil the energy demand of the mankind, utilization of the huge energy of the sun by transforming it into electricity is an emerging alternative way. Recently developed InGaN is a direct band gap solar photovoltaic material that has an amazing tunable band gap of 0.7eV to 3.4 eV and a high optical absorption coefficient over 10 5 /cm. In this paper, numerical simulations has been done using MATLab to explore the unknown potential of this promising material to design a high performance InGaN solar cell. All the required parameters for simulation were determined from the theory, literature and in some cases reasonable estimation. This simulation were done with different ratio of In and Ga content for the single junction solar cell and found a high conversion efficiency of 27.3% with this InGaN compound material.

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Paper-Thin InGaP/ GaAs Solar Cells

Cited by 31 publications

References 3 publications

40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

Design of a Highly Efficient InGaN Single Junction Solar Cell Designed from Numerical Analysis

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