Parabolic quantum wells of diluted magnetic semiconductor Cd1−<i>x</i>Mn<i>x</i>Te

Wójtowicz, T.; Kutrowski, M.; Surma, M.; Kopalko, K.; Karczewski, G.; Kossut, J.; Godlewski, M.; Kossacki, P.; Khoi, Nguyen The

doi:10.1063/1.116046

Cited by 28 publications

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“…Good agreement between calculations and experimental data was obtained in the absence of the magnetic field for Qv = 0.40. Similar agreement could be also obtained in the case of the remaining HPQW samples, giving Qv = 0.40 ± 0.05, and confirming the previous determination of Qv = 0.40 [3]. The accuracy is mainly limited by the uncertainty in the effective mass values.…”

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confidence: 76%

“…Thus, in the case of a HPQW, in comparison with a PQW of the same width, one should observe a greater number of optical transitions. The additional advantage of HPQWs grown by MBE by a digital method [3] is that such asymmetric potential shape is easier to render accurately than in the case of PQW.…”

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confidence: 99%

“…The structures were grown on GaAs (100) oriented substrates using molecular beam epitaxy and the digital growth method which employs Mn flux pulses of different duration [1,3].…”

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Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd_1-xMn_xTe

et al. 1997

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We report on magnetooptical studies of MBE-grown half-parabolic CdTe/CdxMn1-xTe quantum well structures. Quantum wells (QWs) with parabolically shaped confining potential were found to possess very interesting and unique physical properties. They have also the potential for possible applications [1]. Energy levels in parabolic QWs (PQWs) are very sensitive to the actual valence band offset. The accuracy of the band offset determination from the studies of parabolic quantum wells [2] can be further increased when not only the "diagonal" excitonic transitions (i.e., those with Δn = ne -n hh = 0, where ne and nhh are confined level quantum numbers in the conduction and heavy holes band, respectively) but also "nondiagonal" (Δn ψ 0) transitions are observed. The appearance of transitions with Δn ψ 0 is to be expected in half-parabolic quantum wells (HPQWs) whose confining potential lacks the reflection symmetry.

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Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd_1-xMn_xTe

et al. 1997

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“…In this way, magnetic fluctuations influence the relative valence band offset [9]. At low temperatures the magnetic contribution is negligibly small, therefore, the conclusions from previous works (see for example [10] and [11]) concerning relative insensitivity of the offsets to the temperature and the Mn mole fraction, based on low-temperature data, remain valid. However, already at 10 K the magnetic contribution becomes significant and up to 100 K may exceed the usual (nonmagnetic) temperature variation of the gap.…”

Section: Band Offsets In Cdτe/cd1-xμnxτe Structuresmentioning

confidence: 49%

Magnetic Ions in Studies of Semiconductor Quantum Well Structures

Kossacki

1998

Acta Phys. Pol. A

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A few aspects of a relation between magnetic properties of Mn ion system and electronic states confined in CdTe based quantum wells are discussed. It is shown that the influence of the magnetic fluctuations on the states confined in the quantum well results in the reduction of the relative valence band offset with temperature. Also the decrease in the effective Zeeman splitting is observed by a modulation technique at high temperatures and is explained in terms of the modification of the selection rules for an exciton localised in thermal fluctuations. For the p-doped samples the giant Zeeman splitting is used to tune the polarization of a hole gas by a small magnetic field. The "competition-like" relation between the oscillator strength of exciton (Χ) and positive trion (X+) is proved experimentally.

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“…The parabolic quantum-well structures were studied mainly by means of photoluminescence excitation spectroscopy [1]. This method allows us to determinate the partitioning of the energy gap discontinuities between the conduction and the valence bands.…”

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Analysis of Resonant Tunneling for Parabolic Double Barrier Structure

Kaczmarek

1998

Acta Phys. Pol. A

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In this paper the resonant tunneling through the double barrier structure with the parabolic quantum well is studied theoretically. The transmission coefficient for such a structure as a function of applied voltage and the current-voltage characteristics are calculated and compared with those for the double barrier structure with the rectangular quantum well. The conclusion is that the resonant tunneling through parabolic double barrier structure can be used as a method of determination of the conduction band offset of the barrier and the well materials.PACS numbers: 73.40.Gk Recently, quantum structures with graded confining potential have received a great deal of interest, both from the point of view of their physical properties as well as from the point of view of their potential applications. The parabolic quantum-well structures were studied mainly by means of photoluminescence excitation spectroscopy [1]. This method allows us to determinate the partitioning of the energy gap discontinuities between the conduction and the valence bands. The resonant tunneling through the GaAs-AlGaAs double barrier structures (DBS) with a wide parabolic quantum well was also reported [2,3].Since its first observation in 1974 [4] the resonant tunneling has been studied theoretically only for the double barrier structures with a rectangular well between the barriers. The purpose of the present paper is an analysis of this phenomenon for the double barrier structures with the parabolic well. The considered one-dimensional potential profile is shown in Fig. 1 for unbiased and biased structures. The curvature of the well is determined by the height V0 of the barrier and the half-width w of the well.The global transmission coefficient, TG, for the structure under constant electric field, F, was calculated by the standard method, i.e., by matching the electron wave functions and their derivatives at the points of discontinuity of potential [5]. The electron wave functions were taken as linear combinations of the Airy functions in the barrier regions (379)

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Parabolic quantum wells of diluted magnetic semiconductor Cd1−xMnxTe

Cited by 28 publications

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Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd_1-xMn_xTe

Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd_1-xMn_xTe

Magnetic Ions in Studies of Semiconductor Quantum Well Structures

Analysis of Resonant Tunneling for Parabolic Double Barrier Structure

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Parabolic quantum wells of diluted magnetic semiconductor Cd1−xMnxTe

Cited by 28 publications

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Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd1-xMnxTe

Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd1-xMnxTe

Magnetic Ions in Studies of Semiconductor Quantum Well Structures

Analysis of Resonant Tunneling for Parabolic Double Barrier Structure

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Product

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Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd_1-xMn_xTe

Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd_1-xMn_xTe