Paradigm Phase Shift: RF MEMS Phase Shifters: An Overview

Chakraborty, Amrita; Gupta, Bhaskar

doi:10.1109/mmm.2016.2616155

Cited by 52 publications

(18 citation statements)

References 118 publications

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“…MEMS switches and varactors have shown magnificent performances in terms of losses, reliability, and tuning range within the last few years. 8,9 Phase shifters with coplanar waveguide (CPW) and CMOS fabricated technology have been introduced. 10,11 Electronic antenna beam scanning capability is upgraded by essential factors like low-loss efficiency, lightweight, and an extremely low cost to confirm using these phase shifters, contrasted to spun entire antenna through mechanical motors.…”

Section: Introductionmentioning

confidence: 99%

Wideband log‐periodic phase shifters

Zandi-Pouryan

Ghalamkari

Naser‐Moghadasi

2021

Int J RF Microw Comput Aided Eng

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This paper presents concept of wideband log-periodic phase shifter (LPPS) and also three novel microstrip phase shifters using a log-periodic structure for the first time. The process of achieving the goal of wideband releases three mainline models with different characteristics. The design process follows a logperiodic phase shifter theoretical analysis and optimization algorithm of the desired designing platform for circuit tuning. Three proposed main-line logperiodic phase shifters are short-circuited stub LPPS (SS-LPPS), double-sided LPPS (DS-LPPS), and Multilayer coupling LPPS (MC-LPPS). Compact size, planar, ease of fabrication, and wideband are the critical characteristics of the proposed structures. The broadband characteristic of the MC-LPPS is due to top and bottom Log-Periodic microstrip patches broadside coupling of 2 dB through an elliptical slot placed in a ground plane as a middle layer of a structure. Even-odd model analysis of design verification method employed. The optimized overall dimension of the final wideband proposed structure on the low-cost Rogers RO4003C substrate is 35 mm Â 20 mm, Fabricated and tested. Experimental and simulation results have good agreement. S 11 and S 21 are better than À10 and À 1.45 dB in considered 141% fractional bandwidth (1.40-8.11 GHz) for a 130 continuous phase gradient, respectively.

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Section: Introductionmentioning

confidence: 99%

Wideband log‐periodic phase shifters

Zandi-Pouryan

Ghalamkari

Naser‐Moghadasi

2021

Int J RF Microw Comput Aided Eng

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“…An isolation of around 10 dB is considered to be sufficient for reconfigurable devices, whereas microwave and millimeter‐wave operation of the switches is particularly attractive for reconfigurable antennas/surfaces for wireless communications and IoT, space applications, remote sensing, surveillance, and beam‐forming circuits . FET switch design offers several advantages, including very low power consumption as compared to PIN diodes, fast switching times and normal temperature operation as compared to phase‐change temperature tunable switches (GeTe and VO 2 ) …”

Section: Discussionmentioning

confidence: 99%

Solution‐Processed InAs Nanowire Transistors as Microwave Switches

Mirkhaydarov

Votsi

Sahu

et al. 2018

Adv Elect Materials

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and millimeter (mm)-wave applications, enabling rapid maskless prototyping, low temperature processing, and high density integration of microwave elements on large-area, lightweight flexible substrates. [1] Printable filters, [2] antennas, [3] true-time delay lines, [4] wearable frequency selective surfaces (FSSs), [5,6] reconfigurable antennas, [7] phase-arrays, [8] and reflect arrays [9] have been realized, which can enable wireless sensors in Internet of things (IoT) [10] and high data rate mm-wave fifth generation (5G) communications. [11,12] Microwave switches are key to enable reconfigurable antennas, arrays, and FSSs, to modify their radiation pattern, resonant frequency, and polarization. [13,14] Solution processable nanomaterials permit the integration of semiconductors and conductors, using low-temperature and inexpensive processing capability while compatible with flexible substrates. Main classes of solution processable semiconducting materials are conjugated mole cules, carbon nanotubes (CNTs), graphene flakes (GFs), and inorganic semiconducting nanoparticle inks, including semiconducting nanowires (NWs). Although organic semiconductors are the most convenient for solution based deposition, the low charge carrier mobility, 0.1-10 cm 2 V −1 s −1 [15,16] of organic printed field-effect transistors (FETs) results in very high device resistance from tens of kΩ to MΩ, limiting their application in microwave circuits. Other materials, such as CNTs and GFs, require chemical functionalization to be solution processable, which degrades charge transport properties resulting in field-effect mobilities of 9-42 cm 2 V −1 s −1 for CNTs [17][18][19] and below 1.2 cm 2 V −1 s −1 for GFs. [20][21][22] These low mobilities give rise to high channel resistances, thus making these materials less desirable for solution processable high performance microwave switches. The most promising class of materials are semiconducting single crystal NWs, such as III-V materials, that possess high charge carrier mobility in the range of hundreds to few thousand cm 2 V −1 s −1 , [23,24] and they do not require surface functionalization for ink formulations.In this work, we focus on solution processable InAs NWs due to the high electron mobility, reaching 6500 cm 2 V −1 s −1 at room temperature, [25] and low contact resistance with metal tracks, [26][27][28] thereby avoiding the very resistive Schottky barriers common with other semiconducting NWs. [29] Additionally, The feasibility of using self-assembled InAs nanowire bottom-gated fieldeffect transistors as radio-frequency and microwave switches by direct integration into a transmission line is demonstrated. This proof of concept is demonstrated as a coplanar waveguide (CPW) microwave transmission line, where the nanowires function as a tunable impedance in the CPW through gate biasing. The key to this switching capability is the high-performance, low impedance InAs nanowire transistor behavior with field-effect mobility of ≈300 cm 2 V −1 s −1 , on/off ratio of 10 3 , and resistance ...

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“…Usually, the resulting direct-current (DC) power consumption is virtually negligible for FETs and RF MEMS. [16]. On the other hand, the dynamic power consumption constitutes a non-negligible factor related to the charging and discharging of internal capacitors during bias voltage level changes needed for RU phase and amplitude response adjustment.…”

Section: B Ris Power-consuming Modulesmentioning

confidence: 99%

Autonomous Reconfigurable Intelligent Surfaces Through Wireless Energy Harvesting

Ntontin¹,

Boulogeorgos²,

Björnson³

et al. 2021

Preprint

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In this paper, we examine the potential for a reconfigurable intelligent surface (RIS) to be powered by energy harvested from information signals. This feature might be key to reap the benefits of RIS technology's lower power consumption compared to active relays. We first identify the main RIS powerconsuming components and then propose an energy harvesting and power consumption model. Furthermore, we formulate and solve the problem of the optimal RIS placement together with the amplitude and phase response adjustment of its elements in order to maximize the signal-to-noise ratio (SNR) while harvesting sufficient energy for its operation. Finally, numerical results validate the autonomous operation potential and reveal the range of power consumption values that enables it.

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Paradigm Phase Shift: RF MEMS Phase Shifters: An Overview

Cited by 52 publications

References 118 publications

Wideband log‐periodic phase shifters

Wideband log‐periodic phase shifters

Solution‐Processed InAs Nanowire Transistors as Microwave Switches

Autonomous Reconfigurable Intelligent Surfaces Through Wireless Energy Harvesting

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