2009
DOI: 10.1109/jsen.2009.2020240
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Parallel-Field Silicon Hall Effect Microsensors With Minimal Design Complexity

Abstract: A new class of Hall microsensors with minimal design complexity was suggested and experimentally tested. The devices consisting in -Si substrate and three + -strip contacts only are sensitive to a magnetic field parallel to the chip surface. Using a reference voltage generating with a specific bridge circuitry, the linear Hall voltage is extracted and the quadratic geometrical magnetoresistance is fully compensated. The internal noise of the design with a Hall contact located outside the sensor active region i… Show more

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Cited by 23 publications
(13 citation statements)
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“…As a result of the uniformity of the two substrates, as well as of contacts C1 …C4, the two currents IC1,2 and-I C4,3 are equal in magnitude and opposite in sign. If, as a result of technological imperfections, mechanical strain and stress during chip capsulation, temperature gradients and the like [4][5][6], at output VH(B) of the device, at field B = 0, offset VH(B = 0) ≠ 0 appears, notwithstanding that load resistors R1 and R2 are equal, R1 = R2. Varying the value of the low ohmic trimmer r, full compensation of the negative offset at differential output is achieved, VH(B = 0) = 0.…”
Section: Sensor Design and Operation Principlementioning
confidence: 99%
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“…As a result of the uniformity of the two substrates, as well as of contacts C1 …C4, the two currents IC1,2 and-I C4,3 are equal in magnitude and opposite in sign. If, as a result of technological imperfections, mechanical strain and stress during chip capsulation, temperature gradients and the like [4][5][6], at output VH(B) of the device, at field B = 0, offset VH(B = 0) ≠ 0 appears, notwithstanding that load resistors R1 and R2 are equal, R1 = R2. Varying the value of the low ohmic trimmer r, full compensation of the negative offset at differential output is achieved, VH(B = 0) = 0.…”
Section: Sensor Design and Operation Principlementioning
confidence: 99%
“…The well-known 4C in-plane sensitive Hall devices (HD) are widely used in numerous configurations as universal sensors for practical application and last, but not least-to compensate the main disadvantage in differential output transducers-the offset, frequently through dynamic cancellation techniques. In these architectures, one outer and one inner contact are the supply and the other two contacts are the output [1][2][3][4][5][6][7][8][9]. By switching the input and output electrodes of the Hall plate and summing-up algebraically the two obtained voltages, the offset can be significantly decreased [5,7,8].…”
Section: Introductionmentioning
confidence: 99%
“…A three-contact version of this microsensor is presented in Fig. 1 [12]. These Hall elements strongly minimize one essential problem, related to the CMOS technologythe existence of a surface conductive n-layer of the silicon substrate.…”
Section: Concept Of the Novel Two-axis Hall Devicementioning
confidence: 99%
“…If the parallel-field Hall device is deep enough, by using four separate sensing contacts only, H 1 -H 2 and H 3 -H 4 , located at the top side of the silicon chip, where one of the terminal pairs is located in the zone of the inside supply contacts [6,9,16], and the other terminal pair is located in the zone outside the supply electrodes [6,9,13], it is possible to achieve maximum sensitivity [15]. So far, in parallel-field Hall microsensors, the Hall voltage has been measured experimentally by two contacts, H 1 and H 2 , and in the elements with minimal design complexity -by one contact H [6,9,11,12,16].…”
Section: Concept Of the Novel Two-axis Hall Devicementioning
confidence: 99%
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