Parallel statistical capacitance extraction of on-chip interconnects with an improved geometric variation model

Abstract

-In this paper, a new geometric variation model, referred to as the improved continuous surface variation (ICSV) model, is proposed to accurately imitate the random variation of on-chip interconnects. In addition, a new statistical capacitance solver is implemented to incorporate the ICSV model, the HPC [5] and weighted PFA [6] techniques. The solver also employs a parallel computing technique to greatly improve its efficiency. Experiments show that on a typical 65nm-technology structure, ICSV model has significant advantage over other existing models, and the new solver is at least 10X faster than the MC simulation with 10000 samples. The parallel solver achieves 7X further speedup on an 8-core machine. We conclude this paper with several criteria to discuss the trade-off between different geometric models and statistical methods for different scenarios.1