Paralleling of low-voltage MOSFETs operating in avalanche conditions

Buttay, Cyril; Brevet, Olivier; Allard, B.; Bergogne, Dominique; Morel, Hervé

doi:10.1109/epe.2005.219271

Cited by 12 publications

(5 citation statements)

References 12 publications

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“…In the case of avalanche simulation, the model has to include electro-thermal coupling, as the drain-to-source voltage is mainly related to the transistor temperature and to the drain current. This is not obvious in a single-transistor per switch setup (as in the converter described in this paper), but is very important when paralleling devices [23], because it has a strong effect on current sharing.…”

Section: Discussionmentioning

confidence: 99%

“…It has been shown in [14] that is not only temperature-dependent, but also strongly related to the drain current. A specific resistance of the avalanche path, several times higher than the has a strong influence on the breakdown voltage.…”

Section: Capacitancesmentioning

confidence: 99%

“…A test circuit, allowing for accurate identification of the thermoelectrical parameters of the avalanche behavior of the lowvoltage MOSFET transistor has been described in detail in [14]. Using this circuit, it is possible to measure not only drain current and drain-to-source voltage waveforms, but also to estimate transient transistor die temperature during avalanche.…”

Section: Avalanche and Thermal Characterizationmentioning

confidence: 99%

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Model requirements for simulation of low-voltage MOSFET in automotive applications

Buttay¹,

Morel²,

Allard³

et al. 2006

IEEE Trans. Power Electron.

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This paper focuses on the modeling of low-voltage automotive power electronic circuits to obtain accurate system simulation, including estimation of losses. The aim is to compare several metal-oxide semiconductor field-effect transistor (MOSFET) models to find out which can be used for low-voltage, high-current automotive converter simulations. As these models are intended for system simulation, only analytical models are addressed as they may be implemented into any circuit simulator. The different modes of operation of the switches are described (commutation, synchronous rectification, avalanche), and several models of the power MOSFET transistor, allowing for simulation in these modes, are presented. Special care is given to the parameter extraction methods and to the interconnection model of the commutation cell. The four test circuits used to identify the low-voltage power MOSFET model parameters are presented. Comparison between simulations and measurements obtained with a calorimeter are then detailed. This measurement method is accurate and offers a simple way to prove the quality of simulation results. It is shown that the parameter identification is of major concern to achieve high accuracy, as classical Spice models can give good results, providing the model parameters are correctly set.

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Section: Discussionmentioning

confidence: 99%

Section: Capacitancesmentioning

confidence: 99%

Section: Avalanche and Thermal Characterizationmentioning

confidence: 99%

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Model requirements for simulation of low-voltage MOSFET in automotive applications

Buttay¹,

Morel²,

Allard³

et al. 2006

IEEE Trans. Power Electron.

Self Cite

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“…As shown in Fig.1.7, where the red squares refer to the failed components, and the green squares refer to different stressors. It is concluded that the IGBT and chip resistors are critical components according to these specific different research activity in the literature [45], [46], [47], [48], [49], [20], [50], [42], [51], [40], [52], [53], [26], [54], [55], [56], [57], [39], [58], [59], [60], [61], [62], [63] and [64]. It can be concluded from this figure that the thermal cycles are a very common source of failure in the power electronics of the electro-mobile applications.…”

Section: Component Failures In Power Electronics In Electro Mobility mentioning

confidence: 99%

Lifetime Prediction of Boost, Z-source and Y-source Converters in a Fuel Cell Hybrid Electric Vehicle Application

Gadalla

Schaltz

Zhou

et al. 2018

Electric Power Components and Systems

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Acknowledgements are given to the above-mentioned institutions, as well as the Center Of Reliable Power Electronics (CORPE) and Otto Mønsteds Fond, who supported me for conference participation several times through my Ph.D. study. Special thanks to the head of the Department of Energy Technology Assoc. Prof. John K. Pedersen, and Prof. Esmil Abdel Ghafaar from Arab Academy for Science, Technology and Maritime transport (AASTMT) for their tremendous support.

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“…Based on the turn-on mechanism of the power MOSFET [15], [16], the dynamic modeling for a Fuji 2SK3677-01MR power MOSFET is illustrated in Fig. 1.…”

Section: Mosfet and Circuit System Modelingmentioning

confidence: 99%

Sensing Power MOSFET Junction Temperature Using Circuit Output Current Ringing Decay

Niu

Lorenz

2015

IEEE Trans. on Ind. Applicat.

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Junction temperature (T j ) sensing requirements for fast MOSFET junction temperature control and high-power fast switching power converter protection are not easily met with nonintrusive techniques. This paper presents a noninvasive circuitmodel-based sensing method suitable for a high-bandwidth hard-switching converter power MOSFET junction temperature estimation without any additional temperature detector. For the purpose of demonstrating MOSFET junction temperature sensing, a chopper circuit is used. The ringing superimposed with a circuit load current is used for MOSFET junction temperature estimation. A "gate drive-R DS−on −L−C" resonant model is implemented, indicating the mechanism of power MOSFET turn-on dynamics. Modeling includes the gate-drive output parasitics, power MOSFET intrinsic parameters, PCB parasitics, and load parasitics. To evaluate the methodology, LTspice simulation and experimental results are studied.

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Paralleling of low-voltage MOSFETs operating in avalanche conditions

Cited by 12 publications

References 12 publications

Model requirements for simulation of low-voltage MOSFET in automotive applications

Model requirements for simulation of low-voltage MOSFET in automotive applications

Lifetime Prediction of Boost, Z-source and Y-source Converters in a Fuel Cell Hybrid Electric Vehicle Application

Sensing Power MOSFET Junction Temperature Using Circuit Output Current Ringing Decay

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