2022
DOI: 10.3390/electronics11234048
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Parallelism-Aware Channel Partition for Read/Write Interference Mitigation in Solid-State Drives

Abstract: The advancement of multi-level cell technology that enables storing multiple bits in a single NAND flash memory cell has increased the density and affordability of solid-state drives (SSDs). However, increased latency asymmetry between read and write (R/W) intensifies the severity of R/W interference, so reads cannot be processed for a long time owing to the extended flash memory resource occupancy of writing. Existing flash translation layer (FTL)-level mitigation techniques can allocate flash memory resource… Show more

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