Paramagnetic Mn:CdS/ZnS quantum dots: synthesis, luminescence, and magnetic properties

Galyametdinov, Yu. G.; Sagdeev, D. O.; Воронкова, В. К.; Суханов, А. А.; Шамилов, Р. Р.

doi:10.1007/s11172-018-2055-1

Cited by 14 publications

(9 citation statements)

References 12 publications

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“…37 Paramagnetic QDs can be obtained by doping CdSe/ ZnS nanoparticles with manganese. 38 Screening by the core shell of a particle containing highly toxic compounds can considerably reduce their emission into the surrounding environment, which is important when using QDs for medical diagnostics. 35 The synthetic approach implemented to obtain A II B VI quantum dots can be applied to A III B V systems.…”

Section: Methodsmentioning

confidence: 99%

Synthesis of surface-modified quantum dots

Лисичкин

Olenin

2020

Russ Chem Bull

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The review discusses the main methods used to obtain surface-modifi ed quantum dots, specifi cally silicon, heavy metal chalcogenide and pnictide semiconductor nanoparticles. Examples of transformation processes of the grafted layer are considered. The importance of surface modifi cation of А II B VI-and A III B V-type semiconductor nanoparticles for the practical application of quantum dots is shown. It was determined that the most promising areas of their practical application are biology, medicine, and pharmacology. Special attention is paid to the hydrophilization of quantum dots, because only these materials can be used in biomedical applications. Modifi cation of the quantum dot surface with amino acids is considered.

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Section: Methodsmentioning

confidence: 99%

Synthesis of surface-modified quantum dots

Лисичкин

Olenin

2020

Russ Chem Bull

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“…In semiconductor matrices they form structural defects that participate in recombination processes. Ln 3+ also form intraband centers of narrow-band luminescence caused by intra-configuration 5 D 0 → 7 F j transitions of 4 f -electrons [18][19][20][21][22]. Luminescence intensity increases when energy, absorbed by a semiconductor, is transferred to excited levels of Ln 3+ [21,22].…”

Section: Introductionmentioning

confidence: 99%

“…Ln 3+ also form intraband centers of narrow-band luminescence caused by intra-configuration 5 D 0 → 7 F j transitions of 4 f -electrons [18][19][20][21][22]. Luminescence intensity increases when energy, absorbed by a semiconductor, is transferred to excited levels of Ln 3+ [21,22]. Moreover, there is a back transfer of energy, which enhances recombination luminescence.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of zinc sulfide doped with Mn-=SUP=-2+-=/SUP=- and Eu-=SUP=-3+-=/SUP=- ions in dodecane medium

et al. 2022

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Photoluminescence (PL) of zinc sulfide powder synthesized and doped with Mn2+ and Eu3+ ions by the method of emerging reagents in a dodecane medium was investigated. In the absorption and excitation spectra of the PL samples ZnS and ZnS : Mn2+(Eu3+), bands corresponding to the transitions of electrons from the valence band to the conduction band and to the levels of structural defects of ZnS, as well as bands of transition of 4f-electrons of Eu3+ ions from the ground 7F0 to excited electronic states were recorded. A wide band associated with recombination processes at the energy levels of defects on the surface of ZnS particles is observed in the PL spectra. Narrow bands of PL are attributed to 5D0->7Fj and 4T1->6A1 electronic transitions in Eu3+ and Mn2+ ions. They are associated with the intra-zone glow centers formed by these ions in the ZnS structure. Energy transfer from ZnS defect levels to excited energy levels of Eu3+ ions was registered. Assumptions are made about the mutual influence of ZnS and alloying ions, as well as about the influence of synthesis conditions on the spectral properties of substances. Keywords: non-aqueous synthesis, dodecane, zinc sulfide, alloying, manganese (II) ions, europium (III) ions, photoluminescence.

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“…марганцевого" излучения (520−620 nm) [9][10][11][12]. Оно связано с переносом энергии полупроводниковой матрицы на возбужденные уровни ионов Mn 2+ и 4 T 1 → 6 A 1 переходом электронов при возвращении в основное состояние.…”

Section: Introductionunclassified

“…В то же время такие композиции могут найти применение в электронных устройствах, преобразующих электромагнитное излучение, например, в качестве полимерных сенсоров, светодиодов, в генерирующих устройствах. Введение ионов Mn 2+ оказывает влияние на магнитные свойства композиций [11,12]. Отличительными свойствами рассматриваемых акрилатных композиций являются сочетание широкополосной люминесценции полупроводниковых структур и узкополосной люминесценции изолированных в объеме кристаллов лантаноидов, находящихся в полимерной матрице.…”

Section: Introductionunclassified

Фотолюминесценция низкоразмерных композитных структур полиметилметакрилат/(Zn,Cd,Mn,Eu)S

Smagin¹,

Исаева²

2021

Журнал Технической Физики

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A colloidal technology for the synthesis and doping of low-dimensional structures based on zinc and cadmium sulfides directly in the medium of an acrylic monomer is implemented in the process of obtaining optically transparent compositions of polymethylmethacrylate/(Zn,Cd,Mn,Eu)S. It is shown that the photoluminescence of the compositions is associated with a system of levels of structural defects of semiconductor particles located in its band gap, which are formed during successive doping of ZnS and CdS layers with Mn2+ and Eu3+ ions, and with intraband 5D0 → 7F1,2,4 transitions of 4f-electrons of Eu3+ ions. Photoluminescence excitation it occurs as a result of the transition of electrons from the valence band of a semiconductor to the levels of defects in its structure and partial energy transfer to the excited energy levels of Eu3+ ions.

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Paramagnetic Mn:CdS/ZnS quantum dots: synthesis, luminescence, and magnetic properties

Cited by 14 publications

References 12 publications

Synthesis of surface-modified quantum dots

Synthesis of surface-modified quantum dots

Photoluminescence of zinc sulfide doped with Mn-=SUP=-2+-=/SUP=- and Eu-=SUP=-3+-=/SUP=- ions in dodecane medium

Фотолюминесценция низкоразмерных композитных структур полиметилметакрилат/(Zn,Cd,Mn,Eu)S

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