Abstract:Sputter deposited, equiatomic Pt-Mn thin films used in giant magnetoresistive spin valves are found not to exist in the antiferromagnetic state required for device operation. Therefore, an annealing step is needed to induce a phase transformation from the as-deposited, paramagnetic A1 ͑fcc͒ phase to the antiferromagnetic L1 0 phase. The L1 0 phase is the thermodynamically stable configuration, but favorable kinetics for the transformation were only found above 260°C. The A1 to L1 0 phase transformation was stu… Show more
“…After fabrication, we anneal the structures at 300 °C for 2 h. Out-of-plane x-ray diffraction (XRD) spectra indicate a textured polycrystalline orientation along the (111) direction (see supplementary Fig. S1 ), consistent with previous reports 31 , 33 . We obtain an average grain size of 10 ± 2 nm by using Scherrer’s formula.…”
The ability to represent information using an antiferromagnetic material is attractive for future antiferromagnetic spintronic devices. Previous studies have focussed on the utilization of antiferromagnetic materials with biaxial magnetic anisotropy for electrical manipulation. A practical realization of these antiferromagnetic devices is limited by the requirement of material-specific constraints. Here, we demonstrate current-induced switching in a polycrystalline PtMn/Pt metallic heterostructure. A comparison of electrical transport measurements in PtMn with and without the Pt layer, corroborated by x-ray imaging, reveals reversible switching of the thermally-stable antiferromagnetic Néel vector by spin-orbit torques. The presented results demonstrate the potential of polycrystalline metals for antiferromagnetic spintronics.
“…After fabrication, we anneal the structures at 300 °C for 2 h. Out-of-plane x-ray diffraction (XRD) spectra indicate a textured polycrystalline orientation along the (111) direction (see supplementary Fig. S1 ), consistent with previous reports 31 , 33 . We obtain an average grain size of 10 ± 2 nm by using Scherrer’s formula.…”
The ability to represent information using an antiferromagnetic material is attractive for future antiferromagnetic spintronic devices. Previous studies have focussed on the utilization of antiferromagnetic materials with biaxial magnetic anisotropy for electrical manipulation. A practical realization of these antiferromagnetic devices is limited by the requirement of material-specific constraints. Here, we demonstrate current-induced switching in a polycrystalline PtMn/Pt metallic heterostructure. A comparison of electrical transport measurements in PtMn with and without the Pt layer, corroborated by x-ray imaging, reveals reversible switching of the thermally-stable antiferromagnetic Néel vector by spin-orbit torques. The presented results demonstrate the potential of polycrystalline metals for antiferromagnetic spintronics.
“…For dynamical stability C 0 > 0. 44 The positive value of C 0 for the materials under investigation (Table 2) predicted that these materials are mechanically stable.…”
Section: Elastic and Mechanical Propertiesmentioning
“…Detailed information about transformation kinetics can be obtained from DSC results on multilayered thin films. 12,13 However, caution must be used in directly associating the results of this study with GMR devices. To best compare the enthalpy of transformation data with calculated values, we chose to use freestanding single-layer films.…”
Sputter-deposited, equiatomic Ni-Mn thin films were observed to possess a metastable, nanocrystalline, chemically disordered, fcc (A1) structure. Grain growth and a phase change to a chemically ordered, antiferromagnetic L1 0 structure were identified by x-ray diffraction (XRD) and transmission electron microscopy (TEM). Differential scanning calorimetry (DSC) experiments revealed exothermic signals that correspond to the grain growth and phase transformation reactions. The enthalpy of transformation for the A1 to L1 0 phase change was calculated as Ϫ3.5 kJ/mol, which agrees with thermodynamic modeling. An activation energy of 139 kJ/mol was calculated for the phase transformation by the Kissinger method.
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