Paramagnetism of Phosphorus Doped Silicon in the Non-Metallic Impurity Conduction

A synthesis is given of the most significant experimental features of the semiconductor-to-metal transition in group IV semiconductors. Two characteristic concentrations are discussed, the Grst being for a delocalization of electrons (the "Mott" transition), and the second being associated with the entry of the Fermi level into the conduction band of the host material. Experimental values are given for the two concentrations in several materials. Experimental data covering measurements of Hall coeKcient, electrical resistivity and carrier mobility, NMR properties, magnetoresistance, magnetic susceptibility, and ESR properties are employed in arriving at values for the two characteristic concentrations. Si:P is taken as the model system because of the, completeness of experimental measurements. Si:As is also briefly considered.Existing data for n-Ge are examined, as well as the more restricted evidence concerning n-SiC. I. INTRODUCTIOETransitions from insulating to metallic behavior occur in a number of types of solid systems as some parameter of the system or some external variable is changed. It was recognized some time ago that increasing the concentration of shallow donors or acceptors in semiconductors could produce such a change, ' and certain aspects of the theory were developed rather completely at an early stage.

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Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. III. Absorption Intensity

Kodera

1969

J. Phys. Soc. Jpn.

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Paramagnetism of Phosphorus Doped Silicon in the Non-Metallic Impurity Conduction

Cited by 5 publications

References 6 publications

Magnetic properties of boron-doped silicon

Magnetic properties of boron-doped silicon

Semiconductor-to-Metal Transition inn-Type Group IV Semiconductors

Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. III. Absorption Intensity

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