2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems 2009
DOI: 10.1109/nems.2009.5068558
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Parameter characterization of anodic bonded electrical interconnect in MEMS/NEMS devices

Abstract: The approach to realize the electrical interconnect and qualities of the contact have a direct impact on the performance and reliability of devices. Herein, Si-AulPt/Ti contact structure is fabricated using anodic bonding as a novel approach to realize the electrical interconnect. In order to evaluate the qualities of the anodic bonded contact, the contact resistance is extracted. The cross-bridge Kelvin method is optimized and a new method is presented to directly measure the contact resistance, named four-te… Show more

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