Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs

Muhea, Wondwosen Eshetu; Castillo, Gerard U.; Ordonez, Harold C.; Gneiting, Thomas; Ghibaudo, G.; Iñı́guez, Benjamı́n

doi:10.1109/jeds.2020.2970177

Cited by 10 publications

(3 citation statements)

References 17 publications

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“…Furthermore, physical models of leakage current, subthreshold characteristics, contact resistance, short channel effects, frequency dispersion, aging, and process variations are of great potential to be improved for model accuracy and universality for different technologies (figure 26). Low frequency noise modelling is also important for flexible TFTs to be used in low power analogue design [134]. Depending on the TFT technologies, the low frequency noise could be dominated by either carrier number fluctuation or mobility fluctuation.…”

Section: Advances In Compact Modelling To Meet Challengesmentioning

confidence: 99%

The 2021 flexible and printed electronics roadmap

Bonnassieux¹,

Brabec²,

Cao³

et al. 2021

Flex. Print. Electron.

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132

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Section: Advances In Compact Modelling To Meet Challengesmentioning

confidence: 99%

The 2021 flexible and printed electronics roadmap

Bonnassieux¹,

Brabec²,

Cao³

et al. 2021

Flex. Print. Electron.

Self Cite

132

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“…Comparison of the carrier number fluctuation, mobility fluctuation and unified models in linear regime. In the devices targeted the normalized drain current spectral density was inversely proportional to the channel length, what indicated that the Flicker noise was mostly generated in the channel and not in the contacts [96][97][98]. To determine the dominant noise mechanism, I-V measurements were carried out in order to extract model parameters.…”

Section: Temperature Effectsmentioning

confidence: 99%

“…Afterwards, a full compact model for the Flicker noise in IGZO TFT was developed and successfully compared with experimental data [97] (Fig. 29).…”

Section: Temperature Effectsmentioning

confidence: 99%

New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

Iñı́guez

Nathan

Kloes

et al. 2021

IEEE J. Electron Devices Soc.

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We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.

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Modeling and characterization of low frequency noise in self-aligned top-gate coplanar IGZO thin-film transistors

Lee,

Oh,

Lee

et al. 2024

Semicond. Sci. Technol.

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A modified low-frequency noise (LFN) model was proposed to accurately estimate the quality of the gate dielectric in self-aligned top-gate (SA TG) coplanar structure indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs). The proposed LFN model was derived by modifying the conventional carrier number with correlated mobility fluctuation model considering the peculiar characteristics of SA TG coplanar IGZO TFTs such as the channel length reduction due to the diffusion of hydrogen atoms or oxygen vacancies from the source/drain to the channel, as well as the relatively large source/drain parasitic resistance. The proposed model was validated by demonstrating that the measured LFN values were in good agreement with the predicted values from the proposed model for all SA TG coplanar IGZO TFTs with SiO2 gate dielectrics deposited under different plasma-enhanced chemical vapor deposition (PECVD) power densities. The near-interface gate dielectric trap densities extracted from each TFT using the proposed LFN model revealed a clear increase as the PECVD power increased, which is considered a major cause of poor positive-bias-temperature-stress stability of the SA TG coplanar IGZO TFT with SiO2 gate dielectric deposited under high PECVD power conditions.

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Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs

Cited by 10 publications

References 17 publications

The 2021 flexible and printed electronics roadmap

The 2021 flexible and printed electronics roadmap

New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

Modeling and characterization of low frequency noise in self-aligned top-gate coplanar IGZO thin-film transistors

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