Parameter extraction framework for DUV lithography simulation

Jakatdar, Nickhil H.; Bao, Junwei Lucas; Spanos, Costas J.; Niu, Xinhui; Bendik, Joseph J.; Hill, Stephen L.

doi:10.1117/12.350831

Cited by 8 publications

(4 citation statements)

References 4 publications

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“…where u0(z) = I -exp(-cD(z)) and D(z) = Do[exp(_az)+ rI2exp(_a(2d_zfl_2IrIexp(_ad)cos((d_z))] (10) where the D0 is the applied dose in mJ/cm2, corrected by the reflectivity at the air-resist interface, a is the linear absorbance of the resist film in pim1, d is the film thicknessin .tm, n is the real part of the refractive index, ? is the exposure wavelength in jim, C is the acid production rate in cm2/mJ and r is the reflectivity coefficient of the resist/substrate interface.…”

Section: Boundary Conditionsmentioning

confidence: 99%

Physical modeling of deprotection-induced thickness loss

et al. 1999

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High activation energy, chemically amplified resist systems exhibit a 4% to 1 5% volume shrinkage during the post-exposure bake process. Current lithography process simulators do not take this volume shrinkage into account, thus violating the continuity equations used to model the process. This work aims at describing the kinetics ofthe post-exposure bake process by tracking the volume shrinkage observed in high activation resists. A dynamic model is derived and corroborated with experimental results for Shipley UV5. A global simulation technique is then used in conjunction with the models to extract the lithography parameters for these resists.

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Section: Boundary Conditionsmentioning

confidence: 99%

Physical modeling of deprotection-induced thickness loss

et al. 1999

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“…The deprotection reaction rate was assumed proportional to the concentration of the protecting unit and acid. The acid quenching rate was assumed to be proportional to the concentration of the acid and the quencher [18]. The acid concentration generated by exposure was defined through the equation (1).…”

Section: The Fitting Resultsmentioning

confidence: 99%

Recent Progress in EUV Resist Outgas Research at EIDEC

Shiobara¹,

Takagi²,

Kikuchi³

et al. 2015

J. Photopol. Sci. Technol.

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The suppression of extreme ultraviolet (EUV) resist outgassing is one of the challenges in high-volume manufacturing with EUV lithography (EUVL), because it contributes to the contamination of the EUV scanner mirror optics, resulting in reflectivity loss. The outgas qualification using a witness sample (WS) has been developed into the general method for clarifying commercially available, chemically amplified resists. In our recent study, a resist outgas model is proposed and tested to investigate the contamination thickness' dependency on exposure dose. The model successfully explains the experimental outgas phenomenon. It is estimated that increasing exposure dose, in resists with low activation energies (Ea) in deprotection reactions, results in extreme increase in contamination thickness. The detail is explained in this paper.

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“…The exact values of these parameters except of m are given in available literatures for some photoresists [17][18][19][20] . As for chemical amplification photoresists, m can be obtained by exposure simulation and PEB simulation.…”

Section: Simulations and Experimentsmentioning

confidence: 99%

“…where , and the parameters given by available literature [17][18][19][20][21] in Table 1, the etch rate can be calculated from eqs. (16) and (17).…”

Section: Simulations and Experimentsmentioning

confidence: 99%

Numerical study on photoresist etching processes based on a cellular automata model

Zhou

Huang

et al. 2007

SCI CHINA SER E

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For the three-dimensional (3-D) numerical study of photoresist etching processes, the 2-D dynamic cellular automata (CA) model has been successfully extended to a 3-D dynamic CA model. Only the boundary cells will be processed in the 3-D dynamic CA model and the structure of "if-else" description in the simulation program is avoided to speed up the simulation. The 3-D dynamic CA model has found to be stable, fast and accurate for the numerical study of photoresist etching processes. The exposure simulation, post-exposure bake (PEB) simulation and etching simulation are integrated together to further investigate the performances of the CA model. Simulation results have been compared with the available experimental results and the simulations show good agreement with the available experiments. cellular automata, process simulation, optical lithography simulation, modelAs the micro-electro-mechanical systems (MEMS) design and fabrication become increasingly advanced, accurate three-dimensional (3-D) simulation systems for fabrication processes such as etching, lithography, deposition processes, etc. demonstrate to be useful to improve the efficiency of MEMS design and to reduce the development costs of MEMS products. At the same time, 3-D optical lithography simulation becomes significantly important for the accurate analysis of complex structures, such as contacts, corners, etc., and for the optimization of the masks for these structures, as the complexity of integrated circuits (IC) increases [1] . Furthermore, simulation is essential to determine the best way of pushing the present set of equipment involved in optical lithography to its maximum limits [2] .The photoresist etching simulation is usually the most time-consuming step among the basic optical lithography simulation steps [3] , so the key to increase the speed of optical lithography simulation is to speed up the simulation of the photoresist etching process. During the past two decades, some simulators for optical lithography processes have been successfully developed

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Parameter extraction framework for DUV lithography simulation

Cited by 8 publications

References 4 publications

Physical modeling of deprotection-induced thickness loss

Physical modeling of deprotection-induced thickness loss

Recent Progress in EUV Resist Outgas Research at EIDEC

Numerical study on photoresist etching processes based on a cellular automata model

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