Parameter extraction from non-ideal C−V characteristics of a Schottky diode with and without interfacial layer

Türüt, A.; Yalçın, Necati; Sağlam, M.

doi:10.1016/0038-1101(92)90286-l

Cited by 146 publications

(46 citation statements)

References 22 publications

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“…This will occur when the time constant is too long to permit the charge to move in and out of the states in response to an applied signal. 1,17,24,25 Figure 4 shows the dark reverse C Ϫ2 -V characteristics measured at 500 kHz of the Cu/n-GaAs SBDs. The straight-line intercepts of the C Ϫ2 -V plots with voltage axis were obtained and, thus, values of the flat-band barrier heights ⌽ b (C-V).…”

Section: Resultsmentioning

confidence: 99%

“…The large value of the intercept voltage for CuG3 may be explained by accounting for the influence of an interfacial layer at the MS interface. 17 The ⌽ b (C-V) values obtained for the CuG3 were corrected with the help of the following equation: (12) which was developed for SBDs with an interfacial layer in Ref. 17, where V o is the intercept voltage.…”

Section: Resultsmentioning

confidence: 99%

“…17 The ⌽ b (C-V) values obtained for the CuG3 were corrected with the help of the following equation: (12) which was developed for SBDs with an interfacial layer in Ref. 17, where V o is the intercept voltage. The ⌽ b (C-V) value of 1.19 eV for the MIS CuG3 sample was obtained.…”

Section: Resultsmentioning

confidence: 99%

“…The values of n indicate that the device obeys a metal-interface layer-semiconductor (MIS) configuration rather than ideal Schottky diode. 11,12,[17][18][19][20][21][22][23][24][25][26] is the laterally homogeneous barrier height. Figure 2 shows high-frequency (HF) C-V characteristics for sample CuG3 at 100 kHz.…”

Section: Resultsmentioning

confidence: 99%

“…Moreover, Song et al 15 and Mui et al 16 have studied the experimental data of the GaAs Schottky diodes, considering the image-force lowering effect. Turut et al 17 have reported the effect of the interfacial layer on the characteristic parameters of the Schottky diode, such as the ideality factor and barrier height obtained from the forward-bias current-voltage (I-V) characteristics. Newman et al 18 reported that the electronic interactions that determine the charge state of the defect levels (and, therefore, the position of the interface-Fermi level) are not completely understood.…”

Section: Introductionmentioning

confidence: 99%

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The Cu/n-GaAs schottky barrier diodes prepared by anodization process

Bı̇ber

Türüt

2002

Journal of Elec Materi

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The metal-insulating semiconductor (MIS) Cu/n-GaAs diodes with thin anodic-insulating layer, which is formed by anodic oxidization on the n-GaAs substrate in aqueous 4C 2 H 6 O 2 ϩ 2H 2 O ϩ 0.1H 3 PO 4 electrolyte with pH ϭ 2.02; anodically untreated control Cu/n-GaAs diodes; and anodically treated Cu/nGaAs diodes (several steps of anodization in the same electrolyte followed by a dip in diluted aqueous HCl solution and a subsequent rinse in deionized water) have been prepared. The anodization has increased the barrier heights as well as the ideality factors. We have obtained barrier heights of approximately 0.68 eV, 0.90 eV, and 0.92 eV for the control sample, anodically treated sample, and MIS sample, respectively, adding the contribution caused by image-force effect only. Thus, the barrier height has been increased by at least 140 meV. Furthermore, we have calculated a mean tunneling-barrier height of ϭ 0.025 eV for the MIS Cu/n-GaAs Schottky barrier diode (SBD).

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

The Cu/n-GaAs schottky barrier diodes prepared by anodization process

Bı̇ber

Türüt

2002

Journal of Elec Materi

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Junction properties of metal/polypyrrole Schottky barriers

Abthagir

Saraswathi

2001

J of Applied Polymer Sci

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Schottky barriers of the type Au/polypyrrole/Al (or In) were made in sandwich configuration. The conductivity of polypyrrole was tuned to be on the order of 10 Ϫ3 ohm Ϫ1 cm Ϫ1 by its electrodeposition from a novel ambient temperature ternary eutectic melt consisting of acetamide, urea, and ammonium nitrate. The rectification characteristics were obtained from the current-voltage and capacitance-voltage measurements at room temperature. The analysis of data using thermionic emission theory gave improved values for the junction parameters of ideality factor, reverse saturation current, rectification ratio, and barrier potential when compared to the previously reported values for this polymer. Between Al and In metals used for the junction formation, the diode formed with Al metal is found to show better performance. The energy gap and work function of polypyrrole were also estimated.

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Aging effects on the interface state density obtained from current–voltage and capacitance–frequency characteristics of polypyrrole/p‐Si/Al structure

Sağlam

Türüt

2006

J of Applied Polymer Sci

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A metallic polypyrrole film has been directly formed on a p-type Si substrate by means of an anodization method under conditions of constant current density by an electrolyte being held at a constant temperature of 55°C that was composed of 0.40M pyrrole and 0.10M tetrabutylammonium tetrafluoroborate. An aluminum electrode was used as an ohmic contact. The polypyrrole/p-Si/Al structure has clearly demonstrated rectifying behavior by the currentvoltage curves studied at room temperature. The capacitance-voltage-frequency curves of the structure have been measured at different frequencies at room temperature in dark. To observe the effect of the aging, the measurements were also repeated 7, 15, 30, 60, and 90 days after fabrication of the polypyrrole/p-Si/Al Schottky diode. During the whole measurement process, the probe of holder on sample was fixed to eliminate effects of surface inhomogeneity. The interface state density distribution curves of device have been obtained from forward bias current-voltage (I-V) and capacitance-frequency (C-f) characteristics as a function of aging time. From these curves, the exponential growth of the interface-state density from midgap toward the top of the valence band is very apparent. The shape of the interface state density distribution curves from the forward bias I-V characteristics are very similar to those obtained from C-f.

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Parameter extraction from non-ideal C−V characteristics of a Schottky diode with and without interfacial layer

Cited by 146 publications

References 22 publications

The Cu/n-GaAs schottky barrier diodes prepared by anodization process

The Cu/n-GaAs schottky barrier diodes prepared by anodization process

Junction properties of metal/polypyrrole Schottky barriers

Aging effects on the interface state density obtained from current–voltage and capacitance–frequency characteristics of polypyrrole/p‐Si/Al structure

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