Parameter identification of piezoelectric AlGaN/GaN beam resonators by dynamic measurements

Michael, S.; Brueckner, K.; Niebelschuetz, F.; Tonisch, Katja; Schaffel, Ch.

doi:10.1109/esime.2009.4938498

Cited by 2 publications

(3 citation statements)

References 5 publications

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“…Overlapping of the fit functions of each peak causes this error. However, as shown in [31,34] and [35], measurements under low air pressure lead to significantly better quality factors and smaller FWHMs. Because of the high sensitivity to pressure, the authors of [36] suggest using such beam resonators for pressure measurement.…”

Section: Fit Results Discussionmentioning

confidence: 92%

“…First, a model for the complex vibrational behavior is needed. Lorentzian functions derived from the vibrational behavior of charged particles are often used to model a peak of the frequency response [31,32]. However, this function is not able to represent the 1 x -like slope on both sides of the maximum adequately, as shown in Figure 3 with the cyan colored dashed line.…”

Section: Modeling the Spectrummentioning

confidence: 99%

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Automated Parameter Extraction Of ScAlN MEMS Devices Using An Extended Euler–Bernoulli Beam Theory

Krey

Hähnlein

Tonisch

et al. 2020

Sensors

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Magnetoelectric sensors provide the ability to measure magnetic fields down to the pico tesla range and are currently the subject of intense research. Such sensors usually combine a piezoelectric and a magnetostrictive material, so that magnetically induced stresses can be measured electrically. Scandium aluminium nitride gained a lot of attraction in the last few years due to its enhanced piezoelectric properties. Its usage as resonantly driven microelectromechanical system (MEMS) in such sensors is accompanied by a manifold of influences from crystal growth leading to impacts on the electrical and mechanical parameters. Usual investigations via nanoindentation allow a fast determination of mechanical properties with the disadvantage of lacking the access to the anisotropy of specific properties. Such anisotropy effects are investigated in this work in terms of the Young’s modulus and the strain on basis of a MEMS structures through a newly developed fully automated procedure of eigenfrequency fitting based on a new non-Lorentzian fit function and subsequent analysis using an extended Euler–Bernoulli theory. The introduced procedure is able to increase the resolution of the derived parameters compared to the common nanoindentation technique and hence allows detailed investigations of the behavior of magnetoelectric sensors, especially of the magnetic field dependent Young‘s modulus of the magnetostrictive layer.

show abstract

Section: Fit Results Discussionmentioning

confidence: 92%

Section: Modeling the Spectrummentioning

confidence: 99%

Automated Parameter Extraction Of ScAlN MEMS Devices Using An Extended Euler–Bernoulli Beam Theory

Krey

Hähnlein

Tonisch

et al. 2020

Sensors

View full text Add to dashboard Cite

show abstract

“…The widely-used silicon (Si)-based microelectromechanical systems (MEMS) are usually actuated by means of electrostatic forces, which are intrinsically nonlinear for any finite vibration amplitude [1][2][3][4][5][6]. Other MEMS resonators using piezoelectric materials such as PZT, ZnO, GaAs, and GaN, etc [5][6][7][8][9][10][11][12][13] can excite strong mechanical vibrations without suffering from this non linearity, because the piezoelectric effect is essentially a linear phenomenon in the natural solids under small strains. In order to enable co-integration of MEMS with electronics, materials that are both semiconducting and piezoelectric are of particular interest.…”

Section: Introductionmentioning

confidence: 99%

Improved analytical modelling and finite element verification of stressed GaN microbeam resonators by piezoelectric actuation

Zhang¹,

Faucher²,

Théron³

et al. 2017

J. Micromech. Microeng.

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The characteristics of piezoelectric micro-resonators based on vibrating beams essentially depend on two basic physical coefficients, an effective Young’s modulus (Ye) and a piezoelectric coupling factor (e31e). An improved analytic model is proposed with newly derived expressions of Ye and e31e that account for the anisotropic properties of the III-nitride materials and beam width, W. The analytic model applicable to the only axial stress is completed by finite element (FE) simulations that allow any spatial patterns of pre-stress in wafers to be studied. The value of e31e for wider beams is analytically demonstrated to be much higher than the usual e31, and a strong dependence of e31e on W is also confirmed by FE simulations. Resonance frequency (fr) and actuation efficiency (η) are numerically studied for several pre-stress patterns and beam dimensions. The fr is found to be sensitive to the beam width only for resonators under 2D pre-stress while the η to the stress magnitude regardless of stress pattern. Compared with measurements published for some fabricated resonators, both analytic and FE approaches agree well quantitatively for the resonance frequency and qualitatively for the dynamic amplitude. The results of this study can help design optimization, such as appropriate electrode length and suitable beam width, to gain better performance for this type of resonators.

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Parameter identification of piezoelectric AlGaN/GaN beam resonators by dynamic measurements

Cited by 2 publications

References 5 publications

Automated Parameter Extraction Of ScAlN MEMS Devices Using An Extended Euler–Bernoulli Beam Theory

Automated Parameter Extraction Of ScAlN MEMS Devices Using An Extended Euler–Bernoulli Beam Theory

Improved analytical modelling and finite element verification of stressed GaN microbeam resonators by piezoelectric actuation

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