Parameter study of intrinsic carbon doping of AlxGa1−xAs by MOCVD

Influence of growth parameters on the composition and impurity levels of intrinsically carbon doped AlxGa1−xAs

“…The aim of these studies is to obtain high carbon concentrations by the application of low V/III ratios and reduced temperatures. In this respect a detailed parameter study performed at our laboratory yielded carrier concentrations over 1 Â 10 20 cm À3 [20]. In this work large variations in the aluminum fraction were noticed for intrinsically carbon doped Al x Ga 1Àx As samples studied by inductively coupled plasma atomic emission spectroscopy (ICP-AES) analysis.…”

“…At a growth temperature of 550 1C, a layer with the extremely low V/III ratio of 0.50 was grown. In order to prevent deterioration of the surface morphology of the layers [20], the minimal value of the V/III ratio was increased at higher growth temperatures.…”

Improvements in the MOVPE growth of multi-junction solar cells for very high concentration

“…The source materials for the MOVPE growth were trimethylgallium (TMGa), pure arsine (AsH 3 ), pure phosphine (PH 3 ), trimethylindium (TMIn), trimethylaluminium (TMAl), dimethylzinc (DMZn) and diethyltelluride (DETe, 200 ppm diluted in hydrogen). Carbon doping was attained by intrinsic doping varying the temperature and the V/III ratio [5]. The carrier gas was Pd-purified hydrogen and the total flow during growth was around 6-7 slpm.…”

Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cells

“…Intrinsic carbon incorporation in GaAs [3] and AlGaAs [4] is reported to increase with decrease in growth temperature (T gr ) and decrease in V/III ratio. We have investigated intrinsic carbon doping of AlGaAs using tertiarybutylarsine (TBAs).…”