2021
DOI: 10.1149/1945-7111/abe8c0
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Parameterization and Extension of a Model of Oxide Growth by a Multi-Method Approach

Abstract: The technology to form anodic oxides on valve metals will strongly benefit from optimization of process parameters based on deterministic modelling. The relatively large number of adjustable parameters precludes the unambiguous interpretation of steady-state and transient electrochemical data in terms of a unique kinetic model. An approach to overcome this challenge by parameterization of a model of film growth and dissolution using a combination of in situ electrochemical impedance spectroscopy (EIS) in a lar… Show more

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Cited by 2 publications
(5 citation statements)
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“…The main assumption of the proposed model, based on the experimental results obtained is that non-stoichiometric WO 3 , containing significant amounts of W(V) in the cation sublattice is formed on W, whereas an appreciable concentration of oxygen vacancies is present in the anion sublattice. The formation of the oxide proceeds at the metal/film interface with oxidation of the metal and generation of oxygen vacancies [22]:…”
Section: A Model For Film Growth and Tungsten Dissolutionmentioning
confidence: 99%
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“…The main assumption of the proposed model, based on the experimental results obtained is that non-stoichiometric WO 3 , containing significant amounts of W(V) in the cation sublattice is formed on W, whereas an appreciable concentration of oxygen vacancies is present in the anion sublattice. The formation of the oxide proceeds at the metal/film interface with oxidation of the metal and generation of oxygen vacancies [22]:…”
Section: A Model For Film Growth and Tungsten Dissolutionmentioning
confidence: 99%
“…In addition, recombination of cation and oxygen vacancies re-creates the perfect lattice via the inverse Schottky reaction [17][18][19][20][21][22]:…”
Section: A Model For Film Growth and Tungsten Dissolutionmentioning
confidence: 99%
See 3 more Smart Citations