Parameters extraction of solar cells – A comparative examination of three methods

Appelbaum, J.; Peled, A.

doi:10.1016/j.solmat.2013.11.011

Cited by 124 publications

(51 citation statements)

References 12 publications

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“…Ref. [7] where the parameters are extracted by solving the five-parameter model using the Newton-Raphson method for function optimization [3] and by solving the four-parameter model using the classical Newton-Raphson method described above. All the four procedures reproduced the I-V characteristic at STC very accurately.…”

Section: Resultsmentioning

confidence: 99%

“…These points are measured by manufacturer in standard test conditions (STC). STC specifies a global irradiance of 1000 W/m 2 at normal incidence with a spectral distribution AM1.5G and the solar cell operation temperature of 25 C. By using such scarce information provided in a datasheet, the mathematical description of the I-V characteristic becomes a great challenge [1] - [3].…”

Section: Introductionmentioning

confidence: 99%

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Parameters extraction for the one-diode model of a solar cell

Sabadus

Mihailetchi

Paulescu

2017

AIP Conference Proceedings

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Parameters extraction for the one-diode model of a solar cell

Sabadus

Mihailetchi

Paulescu

2017

AIP Conference Proceedings

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“…Various techniques have been adopted so far, like analytical method [10,11] where various equations have been developed to use the J-V characteristic curves and solve for the parameters. Experimental technique was also proposed in which variation in illumination intensity and temperature was used to investigate solar cells meant for concentrated light [12], from which the parameters were extracted.…”

Section: Introductionmentioning

confidence: 99%

Low Reverse Saturation Current Density of Amorphous Silicon Solar Cell Due to Reduced Thickness of Active Layer

Iftiquar¹,

Yi²

2016

Journal of Electrical Engineering and Technology

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-One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (N d ) of the active layer on the J-V curve. When the active layer thickness was varied (for N d = 8×10 17 cm -3 ) from 800 nm to 100 nm, the reverse saturation current density (J o ) changed from 3.56×10 -5 A/cm 2 to 9.62×10 -11 A/cm 2 and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (N d = 4×10 15 cm -3 ), the n remained within 1.45≤n≤1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (J o = 9.62×10 -11 A/cm 2 ) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer.

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“…[15] used a genetic algorithm. An interesting comparison between gradient descendent techniques (based on traditional Newton-Raphson method) and genetic algorithms applied to solar cell extraction parameters is published in [16]. Differently, Ref.…”

Section: Introductionmentioning

confidence: 99%