Parametric Excitation and Amplification of an Acoustic Wave in a Magnetised Piezoelectric Semiconductor

Sharma, Giriraj; Ghosh, S.

doi:10.1002/1521-396x(200104)184:2<443::aid-pssa443>3.0.co;2-s

Cited by 16 publications

(3 citation statements)

References 21 publications

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“…It is found that beyond 0:2 T, CH effects become insignificant. Inclusion of polaronic effects along with NPE is found to be additive as enhancement in parametric gain of the order of 10 6 m -1 is observed when compared to the gain of acoustic wave [40] in a collisiondominated semiconductor plasma. Hence, it can be concluded that second-order nonlinearity is modified under the influence of nonparabolicity and carrier heating effects at low magnetic field and moderate carrier concentrations.…”

Section: Discussionmentioning

confidence: 99%

Polaron-induced parametric interactions in semiconductors: influence of band nonparabolicity and carrier heating

2015

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The modified nonlinear wave dynamics due to band nonparabolicity and carrier heating, arising from parametrically interacting electron-longitudinal optical phonons in a polar semiconductor is studied both theoretically and numerically. Expressions for threshold pump required for the onset of polaron-induced parametric interaction and amplification characteristics are explicitly derived. Polaronic effects along with nonparabolicity are found to be additive and result in tremendous increment in the parametric gain. At smaller magnetic field and moderate carrier concentrations, nonlinearity in energy-dependent effective electron mass and collision frequency, affects threshold and amplification characteristics strongly, which can be utilized for the construction of optical switches.

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Section: Discussionmentioning

confidence: 99%

Polaron-induced parametric interactions in semiconductors: influence of band nonparabolicity and carrier heating

2015

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“…The x-and y-components of perturbed carrier's fluid velocity can be obtained from Eq. ( 3) by using the method adopted by Sharma and Ghosh [21]:…”

Section: Methodsmentioning

confidence: 99%

Hot Carrier Effects on Real and Imaginary Parts of Brillouin Susceptibilities of Magnetoactive Doped III-V Semiconductors (Applied to N-type Doped InSb)

Kumari

Singh

2022

Trends Sci

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An analytical investigation is made of hot carrier effects on real and imaginary parts of Brillouin susceptibility ( ) of magnetoactive doped III-V semiconductors. Coupled mode approach is used to obtain expressions for . Numerical calculations are made for n-InSb crystal −CO2 laser system. Efforts are made to obtain enhanced values of and change of their sign under appropriate selection of external magnetic field (B0) and doping concentration (n0). The hot carrier effects of intense laser radiation modifies the momentum transfer collision frequency of carriers and consequently the nonlinearity of the medium, which in turn (i) further enhances , (ii) shifts the enhanced towards smaller values of B0, and (iii) widens the range of B0 at which change of sign of occurs. The change of sign of enhanced of magnetoactive doped III-V semiconductors, validates the possibility of chosen Brillouin medium as a potential candidate material for the fabrication of stimulated Brillouin scattering dependent widely tunable and efficient optoelectronic devices such as optical switches and frequency converters. HIGHLIGHTS Hot carrier effects of intense laser radiation enhances real and imaginary parts of Brillouin susceptibility, shifts the enhanced real and imaginary parts of Brillouin susceptibility towards smaller values of magnetostatic field, widens the range of magnetostatic field at which change of sign of real and imaginary parts of Brillouin susceptibility occurs Analysis offer three achievable resonance conditions at which significant enhancement as well as change of sign of real and imaginary parts of Brillouin susceptibility are obtained Analysis establishes the technological potentiality of III-V semiconductors as hosts for fabrication of SBS based widely tunable and efficient optoelectronic devices GRAPHICAL ABSTRACT

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“…To study parametric instability including more quantum effects could be one of the fields where the researchers can look upon. Sharma and Ghosh [190] studied parametric excitation of an acoustic wave in a transversely magnetized piezoelectric semiconductor using the QHD model. It has been reported that parametric excitation of an acoustic wave can be obtained in a piezoelectric crystal above some threshold pump field E th .…”

Section: Parametric Instability In Semiconductor Plasma and Piezoelectric Semiconductorsmentioning

confidence: 99%

Comprehensive Review on Various Instabilities in Semiconductor Quantum Plasma

Sharma

Deka

2021

Braz J Phys

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The growing demand for nano-sized and efficient semiconductors leading to a technological revolution in quantum technology has unleashed into the development of new types of compound semiconductors of nano-scale. However, the physical phenomena limiting their efficiency requires more study into the charge transportation phenomena. The study of instabilities like drift instability and modulation instability of the waves excited in a semiconductor plasma due to various force field configurations with the inclusion of quantum effects has gained recent attention, as the solid-state plasma in a semiconductor satisfies the condition for quantum plasma. The different types of instabilities, its mechanism, and effect in a semiconductor quantum plasma, have been studied in detail and presented in this article. Most of the works that has been carried out to study the instabilities have used the quantum hydrodynamic (QHD) model. The important quantum effects that are highlighted in most of the work includes the Bohm potential, exchange potential, and Fermi degenerate pressure in the nano-sized quantum semiconductors. This review work may be relevant to all who wants to have an insight on various instabilities in semiconductor quantum plasma.

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Parametric Excitation and Amplification of an Acoustic Wave in a Magnetised Piezoelectric Semiconductor

Cited by 16 publications

References 21 publications

Polaron-induced parametric interactions in semiconductors: influence of band nonparabolicity and carrier heating

Polaron-induced parametric interactions in semiconductors: influence of band nonparabolicity and carrier heating

Hot Carrier Effects on Real and Imaginary Parts of Brillouin Susceptibilities of Magnetoactive Doped III-V Semiconductors (Applied to N-type Doped InSb)

Comprehensive Review on Various Instabilities in Semiconductor Quantum Plasma

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