Parametric investigation and trap sensitivity of n-p-n double gate TFETs

Deb, D.; Goswami, Rupam; Baruah, Ratul Kumar; Kandpal, Kavindra; Saha, Rajesh

doi:10.1016/j.compeleceng.2022.107930

Cited by 12 publications

(3 citation statements)

References 23 publications

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“…Additionally, HS-TFET provides the maximum sensitivity for E o = 0.45 eV for donor trap charges, E o = 0.65 eV in acceptor impurities at V gs = 0.3 V. It is seen that maximum sensitivity is observed at lower value of V gs in ZHP-TFET compared to HS-TFET due to variation in threshold voltage. Moreover, distribution reports maximum trap sensitivity when it lies in the middle of bandgap as shown in figures 16(c), (d)[23]. The maximum traps sensitivity is observed 12 000% and 120000% at E o = 0.65 eV and 0.45 eV for acceptor and donor like traps, respectively, in ZHP-TFET.…”

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confidence: 81%

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Trap sensitivity of splitted source Z Shape horizontal pocket and hetero stack TFETs: a simulation study

Tiwari¹,

Saha²

2023

Phys. Scr.

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This paper reports the trap sensitivity analysis of split source horizontal pocket Z shape tunnel field effect transistor (ZHP-TFET) and hetero stack TFET (HS-TFET) using technology computer aided design (TCAD) simulator. The sensitivity analysis elaborates the significance of ideal trap charges at the interface of oxide and semiconductor material for both acceptor and donor like traps. The trap sensitivity analysis is highlighted for variation in trap-concentrations, temperature, gate-metal work function, and peak energy position, for both the TFETs. Furthermore, we have implemented digital inverter on taking into account the interface trap charges effect. Result reveals that tarp sensitivity on various electrical parameter of HS-TFET is significantly higher than ZHP-TFET. It is seen that ZHP-TFET provides sensitivity around 11 and 33 under acceptor and donor impurities, respectively, whereas, for HS-TFET sensitivity is around 22 and 60 for acceptor and donor impurities, respectively, for wide variation in trap concentration. The voltage transfer characteristic and voltage gain of digital inverter are improved by observable amount in ZHP-TFET than HS-TFET for both donor and acceptor like trap. The noise margin of ZHP-TFET based resistive inverter comes 0.75 V, 0.73 V, and 0.77 V, while in case of HS-TFET these value noted as 0.32 V, 0.13 V and 0.37 V under consideration for no trap, acceptor trap, and donor trap, respectively.

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confidence: 81%

“…The Gaussian distribution is the most practical distribution and therefore, during sensitivity calculation we consider such non-ideal distribution at oxide-semiconductor interface. Mathematically, it is defined as [20,23,24]:…”

Section: Device Structure and Simulation Setupmentioning

confidence: 99%

Trap sensitivity of splitted source Z Shape horizontal pocket and hetero stack TFETs: a simulation study

Tiwari¹,

Saha²

2023

Phys. Scr.

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“…These variables determine the optical behavior of Many technologies have been adopted in the existing literature to resolve these vulnerabilities [6]. Some notable strategies include inserting a horizontal pocket in the source region [6], positioning a high-k gate dielectric oxide layer near the source side to increase the tunneling rate [7,8], using Mg 2 Si source heterojunction double-gate TFET [9] for reducing the concentrations of dopants in the drain region [10], etc. However, most of the research is conducted to better improve the electrical parameters of TFETs.…”

Section: Introductionmentioning

confidence: 99%

Optical FOMs of extended-source DG–TFET photodetector in the visible range of the spectrum

Tiwari

Chonzom²,

Saha³

2023

Semicond. Sci. Technol.

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In this paper, the optical characteristics of Extended Source Double Gate Tunnel Field Effect Transistor (ESDG-TFET) based photo detector is studied in the visible range of spectrum for wavelength (300-700) nm. The optical characteristics are examined at three specific wavelength = 300, 500, and 700 nm with an Intensity of 0.7W/cm2. The optical behavior of photosensor like absorption rate, generation rate, energy band profiles, transfer characteristics, sensitivity (Sn), quantum efficiency (), signal to noise ratio (SNR), and Detectivity are extracted according to the incident wavelength of light. Results reveal that ESDG-TFET based photosensor exhibits the better optical characteristics at 300 nm compared to 500 and 700 nm. It is found that proposed photosensor provides sensitivity, SNR, and responsivity in the order of 91.2, 79 (dB), and 0.74 (A/Watt), respectively at = 300 nm. Due to high incident optical energy (Eg) at 300 nm, the absorption and emission rate of this photosensor are significantly large and consequently, it reports better optical characteristics. Finally, a comparative study of proposed TFET based photosensor with photosensor cited in literature are summarized in tabular form. A comparison study in terms of spectral sensitivity between single gate and double gate ESDG-TFET is reported. Moreover, an inverter circuit based on ESDG-TFET is designed and the corresponding transient analysis are highlighted under both dark and light states.

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