Parametric model calibration and measurement extraction for LFN using virtual instrumentation

Abstract

This paper presents a replicable and systematic procedure to extract the parameters used in models to estimate low frequency noise (LFN) in metal-oxide-semiconductor (MOS) transistors. This procedure does not neglect the effect of any source of noise manifesting in the device under test (DUT). This procedure includes the design and implementation of an automation process to perform noise measurements using a virtual instrumentation platform. Noise parameters were extracted in different DUT's and validated by comparing simulation data with experimental measurements. All the experimental data was extracted with the automation procedure proposed.