Parametric simulation of SiC Schottky JBS structures

Abstract

The parametric simulation has been carried out for optimizing the influence of the Schottky contact metal work function (contact surface interface) influence on the distribution of the built-in electrical field and consequently on static and dynamic characteristics of the JBS device. On the basis of simulations and discussions the low-power losses solution for the JBS device has been developed. The results suggest keeping the electric field strength under contact surface as low as possible in order to reduce or even avoid the relatively expensive and complex passivation solutions by the manufacturing of the JBS devices.The numerical simulator DYNAMIT 2DT-SCHOTTKY developed at the Department of Electronics TUT was used in our research.