Parametric studies on pulsed near ultraviolet frequency tripled Nd:YAG laser micromachining of sapphire and silicon

Chen, Tai-Chang; Darling, Robert M.

doi:10.1016/j.jmatprotec.2005.03.023

Cited by 66 publications

(34 citation statements)

References 10 publications

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“…Table 4. Some physical properties of sapphire, silicon, and Pyrex (Chen & Darling, 2005 In general, the laser ablation rates of sapphire, silicon, and Pyrex micromachined by near UV (355 nm) and mid-UV (266 nm) nanosecond pulsed Nd:YAG lasers, are higher using the 266 nm laser than the 355 nm laser in the absence of plume screening effects. Under those high laser fluency micromachining conditions, non-linear optical phenomena such as multiphoton process become important, and the 266 nm laser (with photon energy = 4.66 eV) has a higher probability to induce photochemical process than the 355 nm laser (with photon energy = 3.50 eV).…”

Section: Discussionmentioning

confidence: 99%

Fundamentals of Laser Ablation of the Materials Used in Microfluiducs

Chen¹,

Darling²

2012

Micromachining Techniques for Fabrication of Micro and Nano Structures

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Section: Discussionmentioning

confidence: 99%

Fundamentals of Laser Ablation of the Materials Used in Microfluiducs

Chen¹,

Darling²

2012

Micromachining Techniques for Fabrication of Micro and Nano Structures

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“…The experimental study of micromachining of sapphire (381 mm) and silicon (533 mm) wafers show that the MRR increases with beam energy density irrespective of machining speed (Fig. 10) [66]. The MRR of mullitealumina ceramic during laser cutting was increased by proper selection of off-axis nozzle angle (optimum value 451) and distance between the impinging point of the gas jet and the laser beam front (optimum value 3 mm) [67].…”

Section: Materials Removal Rate (Mrr)mentioning

confidence: 97%

Laser beam machining—A review

Dubey¹,

Yadava²

2008

International Journal of Machine Tools and Manufacture

744

230

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“…For some of them such as silicon, glass, sapphire, the ultraviolet lasers (UV) were developed in order to increase the material absorption [1,2]. While UV lasers around 350 nm obtained by third harmonic generation (THG) are now commonly used in material processing, deep-UV lasers obtained by fourth harmonic generation (FHG) around 260 nm are still challenging to realize.…”

Section: Introductionmentioning

confidence: 99%

Impact of BaB2O4 growth method on frequency conversion to the deep ultra-violet

Deyra

Maillard

et al. 2015

Solid State Sciences

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To cite this version:Loic Deyra, Alain Maillard, R Maillard, D Sangla, F Salin, et al.. Impact of BaB 2 O 4 growth method on frequency conversion to the deep ultra-violet. Solid State Sciences, Elsevier, 2015, 50, pp.97-100. 10 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. Czochralski and TSSG β-BBO crystals are compared for high power UV (266nm) in second harmonic generation. Impurities from flux decrease the efficiency of harmonic generation at high power (40%). Corresponding author : A Maillard, alain.maillard@univ-lorraine.fr M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT Impact of BaBAbstract: In this article, we report how the growth method used for barium beta-borate β−BaB2O4 (BBO) impacts its high power second harmonic generation properties in the deep-UV. We compared a BBO crystal grown by flux (Top Seeded Solution Growth or TSSG) and a BBO crystal grown by the Czochralski (CZ) method. We first characterized their transparency properties, then we measured their single-pass second harmonic conversion efficiencies with both a low average power and a high average power nanosecond pulsed lasers. We show that both crystals have comparable linear absorption and conversion efficiencies at low power, whereas in a high power experiment, the CZ-grown BBO yields higher conversion efficiency than the TSSG grown BBO. With a 30 W, 150 kHz, 8ns green laser, the use of a CZ BBO led at best to a 40% increase in available average output power at 257 nm.Keywords: Borates, Nonlinear optical, Czochralski growth, Solution growth, Second harmonic generation. IntroductionThe material machining industry has continuously looked to process more and more types of materials efficiently. For some of them such as silicon, glass, sapphire, the ultraviolet lasers (UV) were developed in order to increase the material absorption [1,2]. While UV lasers around 350 nm obtained by third harmonic generation (THG) are now commonly used in material processing, deep-UV lasers obtained by fourth harmonic generation (FHG) around 260 nm are still challenging to realize. The nonlinear material quality is a key parameter in order to reach high and stable conversion efficiency by reducing thermal dephasing and degradation effects. Beta-barium borate β-BaB2O4 (BBO) is a nonlinear crystal that has good properties for frequency conversion to the UV, such as a high nonlinearity or a short cut-off wavelength in the UV around 190nm [3]. It is available commercially, and is usually grown by top-seeded solution growth (TSSG) assisted with either a Na2O or NaF flux [4]. BBO can be also grown without flux by the Czochralski (CZ) method, but...

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Parametric studies on pulsed near ultraviolet frequency tripled Nd:YAG laser micromachining of sapphire and silicon

Cited by 66 publications

References 10 publications

Fundamentals of Laser Ablation of the Materials Used in Microfluiducs

Fundamentals of Laser Ablation of the Materials Used in Microfluiducs

Laser beam machining—A review

Impact of BaB2O4 growth method on frequency conversion to the deep ultra-violet

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