2019
DOI: 10.1016/j.vacuum.2019.04.017
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Parametric study and residual gas analysis of large-area silicon-nitride thin-film deposition by plasma-enhanced chemical vapor deposition

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Cited by 21 publications
(8 citation statements)
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“…The design of the showerhead is crucial as it directly affects the distribution of the flow field . By optimizing the structure of the showerhead, it is possible to control the deposition shape of the film and improve the uniformity of the film thickness. When the shape of the microchannel on the showerhead changes, the deposition rate also changes simultaneously . Therefore, the structure of the microchannel directly affects the gas uniformity of the showerhead.…”
Section: Introductionmentioning
confidence: 99%
“…The design of the showerhead is crucial as it directly affects the distribution of the flow field . By optimizing the structure of the showerhead, it is possible to control the deposition shape of the film and improve the uniformity of the film thickness. When the shape of the microchannel on the showerhead changes, the deposition rate also changes simultaneously . Therefore, the structure of the microchannel directly affects the gas uniformity of the showerhead.…”
Section: Introductionmentioning
confidence: 99%
“…This could be due to the pyrolysis of DCS and decomposition of NH 3 at lower temperatures, and then, the Si was formed and easily oxidized in air, which is consistent with the XRD results. The deposition rate also decreased significantly with decreasing temperature in agreement with the Arrhenius mechanism [33].…”
Section: Resultssupporting
confidence: 80%
“…The Ag-free MoO 3 -SiO 2 nanocomposite coating and Ag-containing MoO 3 -SiO 2 nanocomposite coating were deposited by a double cathode glow discharge system [21] employing two targets with stoichiometric ratios of Mo 50 Si 50 and Mo 47.5 Si 47.5 Ag 5 , respectively. In attempts to avoid the negative effect of residual gas on quality of coatings [22], before sputter deposition, the chamber was pumped down to a residual gas pressure of 5 × 10 −4 Pa. Substrate specimens were etched by Ar ion bombardment at a potential of −650 V for 20 min to get rid of any contamination from the specimen surface. The working gas was composed of high-purity argon and oxygen, which passed into the chamber by mass flow controllers.…”
Section: Coatings Preparationmentioning
confidence: 99%