Parametric study on excitation temperature and electron temperature in low pressure plasmas

Park, Ho-Yong; Choe, Wonho

doi:10.1016/j.cap.2010.05.013

Cited by 44 publications

(25 citation statements)

References 19 publications

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“…The same trend reported by using micro-discharge at medium to high pressure in argon [34]. On the other hand, a decrease in excitation temperature with an increased pressure has been reported at low-pressure argon plasma discharge [25], low power microwave plasma [31], and high pressure of in-liquid plasma in water [30]. Fig.…”

Section: Considering That N(t)/u(t) Is a Standard Constant For All LIsupporting

confidence: 64%

Application of Argon Plasma Jet for Methane Hydrate Decomposition by Radio Frequency Irradiation

Rahim

Nomura

Mukasa

et al. 2017

International Journal on Advanced Science, Engineering and Information Technology

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Abstract-In this study, decomposition of methane hydrate using argon plasma jet investigated in the pressure range of 0.1MPa to 2.0MPa. The plasma generated under the high-pressure condition, which is difficult to achieve when using radio frequency (RF) plasma in the liquid method. By using emission spectrometer analysis, the excitation temperature is found to increase as the gas pressure increases, whereas, it decreases as the argon flow rate increases. During the process of plasma irradiation, the required essential reactions for methane hydrate decomposition, such as methane hydrate dissociation (MHD), steam methane reforming (SMR), and methane cracking reaction (MCR) were not completely satisfied due to an insignificant amount of methane. The gas chromatography analysis confirmed that the methane cracking reaction (MCR) was only occurred to generate hydrogen and the C (s) , due to the absence of C 2 H 2 and C 2 H 4 as the byproducts. In comparison with the other primary reactions of methane hydrate decomposition, steam methane reforming reaction became dominant in converting methane into hydrogen. Although the hydrogen production efficiency is less than that of radio frequency plasma in liquid, the reduction of CO 2 by the thermal decomposition of Teflon from CO making it possible is considered as an advanced promising technique in the future.

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Section: Considering That N(t)/u(t) Is a Standard Constant For All LIsupporting

confidence: 64%

Application of Argon Plasma Jet for Methane Hydrate Decomposition by Radio Frequency Irradiation

Rahim

Nomura

Mukasa

et al. 2017

International Journal on Advanced Science, Engineering and Information Technology

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“…It should be stated here that many excellent papers have been already published where the argon CR model is applied to measure the plasma parameters in the low-temperature non-equilibrium plasmas, particularly, for the recent years. The relationship between the excitation temperature and the electron density, whose principle is later explained in section 3.3, was also widely investigated, for example, by Park and Choe [46]. For the optical thick conditions, Zhu and his co-workers published a remarkable theory that explained experiments [47].…”

Section: Introductionmentioning

confidence: 99%

Optical Emission Spectroscopic (OES) analysis for diagnostics of electron density and temperature in non-equilibrium argon plasma based on collisional-radiative model

Akatsuka

2019

Advances in Physics: X

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This paper describes the use of Optical Emission Spectroscopy (OES) to measure electron densities and temperatures in nonequilibrium plasmas. The ways to interpret relative lineintensities of neutral argon atoms are evaluated based upon a collisional-radiative model including atomic collisional processes. A conversion from an excitation temperature determined from relative line intensities assuming a Boltzmann population distribution to the thermal electron temperature in the electron temperature range 1-4 eV and electron density range 10 10-10 12 cm-3 is given. Procedures to obtain electron temperature T e and density N e of non-equilibrium argon plasma by OES measurement with collisional radiative model.

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“…In the experiment, 13.56 MHz RF powered inductively coupled plasma-reactive ion etch (ICP-RIE), manufactured by Plasmart, Daejeon, Korea, was used to employ CF 4 /O 2 plasma. ICP plasma yields higher density plasma than capacitively coupled plasma with more ions and radicals due to its high electron temperature and electron density [17]. The plasma irradiation conditions were an ICP source power of 450 W, CF 4 and O 2 gas flow of 55 sccm, base pressure of 20 mTorr, and 300 W 12.56 MHz RF bias power.…”

Section: Methodsmentioning

confidence: 99%

“…Except for the type of process gas, the other experimental conditions were kept The samples were directly placed on the wafer chuck to increase the chemical reaction of fluorine with the ceramic surface, and an RF bias of 300 W was applied to accelerate physical ion bombardment onto the sample surface. In ICP-RIE, increased RF bias power positively affects the electron energy distribution, which increases the plasma potential [17]. In conventional semiconductor etching, 300 W bias power with 450 W source power is an exaggerated condition, but this experimental condition is conceptually valid to accelerate ceramic surface erosion.…”

Section: Methodsmentioning

confidence: 99%

Surface Analysis of Chamber Coating Materials Exposed to CF4/O2 Plasma

2021

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Coating the inner surfaces of high-powered plasma processing equipment has become crucial for reducing maintenance costs, process drift, and contaminants. The conventionally preferred alumina (Al2O3) coating has been replaced with yttria (Y2O3) due to the long-standing endurance achieved by fluorine-based etching; however, the continuous increase in radio frequency (RF) power necessitates the use of alternative coating materials to reduce process shift in a series of high-powered semiconductor manufacturing environments. In this study, we investigated the fluorine-based etching resistance of atmospheric pressure-sprayed alumina, yttria, yttrium aluminum garnet (YAG), and yttrium oxyfluoride (YOF). The prepared ceramic-coated samples were directly exposed to silicon oxide etching, and the surfaces of the plasma-exposed samples were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. We found that an ideal coating material must demonstrate high plasma-induced structure distortion by the fluorine atom from the radical. For endurance to fluorine-based plasma exposure, the bonding structure with fluoride was shown to be more effective than oxide-based ceramics. Thus, fluoride-based ceramic materials can be promising candidates for chamber coating materials.

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Parametric study on excitation temperature and electron temperature in low pressure plasmas

Cited by 44 publications

References 19 publications

Application of Argon Plasma Jet for Methane Hydrate Decomposition by Radio Frequency Irradiation

Application of Argon Plasma Jet for Methane Hydrate Decomposition by Radio Frequency Irradiation

Optical Emission Spectroscopic (OES) analysis for diagnostics of electron density and temperature in non-equilibrium argon plasma based on collisional-radiative model

Surface Analysis of Chamber Coating Materials Exposed to CF4/O2 Plasma

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