Parasitics and Current-Dispersion Modeling of AlGaN/GaN HEMTs Fabricated on Different Substrates Using the Equivalent-Circuit Modeling Technique

Alsabbagh, Mohamad

doi:10.20381/ruor-24934

2020

DOI: 10.20381/ruor-24934

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Parasitics and Current-Dispersion Modeling of AlGaN/GaN HEMTs Fabricated on Different Substrates Using the Equivalent-Circuit Modeling Technique

Mohamad Alsabbagh¹

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Parasitics and Current-Dispersion Modeling of AlGaN/GaN HEMTs Fabricated on Different Substrates Using the Equivalent-Circuit Modeling Technique

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