Partial crystallization of silicon by high intensity laser irradiation

Azuma, Hirozumi; Sagisaka, A.; Daido, Hiroyuki; Itō, Isao; Kadoura, Hiroaki; Kamiya, Nobuo; Ito, Tadashi; Nishimura, Akihiko; Ma, Jing; Mori, M.; Orimo, Satoshi

doi:10.1016/j.apsusc.2009.04.143

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“…They indicated that short laser pulse was necessary to reduce heat affected depth or melting due to heat flow from the ablation area into the bulk material. The partial re-crystallization of silicon by high intensity laser irradiation was investigated by Azuma et al [13]. They showed that only amorphous silicon particles were found to be piled on the amorphous silicon film irrespective of laser intensity and pulse duration.…”

Section: Introductionmentioning

confidence: 98%

Laser short-pulse heating of silicon film with the presence of metallic substrate

Mansour

Yilbaş

2010

Current Applied Physics

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Section: Introductionmentioning

confidence: 98%

Laser short-pulse heating of silicon film with the presence of metallic substrate

Mansour

Yilbaş

2010

Current Applied Physics

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Giant enhancement of free charge carrier concentration in boron-doped amorphous hydrogenated silicon under femtosecond laser crystallization

Pavlikov

Форш

Svyakhovskiy

et al. 2018

Applied Physics Letters

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The modification of boron-doped amorphous hydrogenated silicon films [a-Si:H(B)] with femtosecond laser radiation is studied in this work. It is demonstrated that femtosecond laser crystallization of the a-Si:H(B) film area leads to extremely high values of the free charge carrier (hole) concentration, which is typical for degenerated semiconductors. The free charge carrier concentration is locally determined by measuring the Raman spectra in the modified areas. The shape of Raman spectra is typical for Fano resonance. It is found that the charge carrier concentration in the modified areas may exceed 1020 cm−3 depending on the femtosecond irradiation conditions. The areas with such a high concentration of free charge carriers are also characterized by high volume fraction of crystalline phase (more than 90%). Such a sharp increase in the free charge carrier concentration in the modified areas may be explained by an increase in concentration of electrically active boron atoms. The activation energy of the temperature dependence of the conductivity for laser beam treated areas is in full agreement with the data obtained from the analysis of the Raman scattering spectra.

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Partial crystallization of silicon by high intensity laser irradiation

Cited by 2 publications

References 13 publications

Laser short-pulse heating of silicon film with the presence of metallic substrate

Laser short-pulse heating of silicon film with the presence of metallic substrate

Giant enhancement of free charge carrier concentration in boron-doped amorphous hydrogenated silicon under femtosecond laser crystallization

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